參數(shù)資料
型號: QM50E2Y-H
廠商: Mitsubishi Electric Corporation
英文描述: MEDIUM POWER SWITCHING USE INSULATED TYPE
中文描述: 中功率開關(guān)使用絕緣型
文件頁數(shù): 3/6頁
文件大?。?/td> 89K
代理商: QM50E2Y-H
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM50E2Y/E3Y-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
ELECTRICAL CHARACTERISTICS
(Diode part (D2), T
j
=25
°
C)
Symbol
I
RRM
V
FM
t
rr
Q
rr
R
th (j-c)
R
th (c-f)
Parameter
Repetitive peak reverse current
Forward voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
Contact thermal resistance
Test conditions
V
R
=V
RRM
, T
j
=150
°
C
I
F
=50A
I
F
=50A, di/dt=–100A/
μ
s, V
R
=300V, T
j
=150
°
C
Junction to case
Conductive grease applied (case to fin)
Unit
mA
V
μ
s
μ
C
°
C/W
°
C/W
Limits
Min.
Typ.
Max.
5.0
1.5
0.9
20
0.65
0.15
PERFORMANCE CURVES
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
C
I
C
D
h
F
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(A)
B
I
B
S
V
C
,
B
COLLECTOR CURRENT
I
C
(A)
BASE-EMITTER VOLTAGE
V
BE
(V)
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
1
10
10
7
5
4
3
2
–1
10
7
5
4
3
2
1.2
1.6
2.0
2.4
2.8
3.2
V
CE
=2.0V
T
j
=25°C
100
80
60
40
20
00
1
2
3
4
5
T
j
=25°C
I
B
=1A
I
B
=0.65A
I
B
=0.3A
I
B
=0.2A
I
B
=0.1A
–1
10
1
10
7
5
4
3
2
10
7
5
4
3
2
0
10
2 3 4 5 7
1
10
2 3 4 5 7
2
10
V
CE
=2.0V
V
CE
=5.0V
T
j
=25°C
T
j
=125°C
10
10
3
10
7
5
4
3
2
2
10
7
5
4
3
2
0
2 3 4 5 7
1
10
2 3 4 5 7
2
10
T
j
=25°C
T
j
=125°C
V
BE(sat)
V
CE(sat)
I
B
=0.65A
相關(guān)PDF資料
PDF描述
QM50E2Y MEDIUM POWER SWITCHING USE INSULATED TYPE
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
QM50E2Y-HD 制造商:Mitsubishi Electric 功能描述:
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QM50E3Y-H 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER SWITCHING USE INSULATED TYPE
QM50E3Y-HD 制造商:Mitsubishi Electric 功能描述:
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