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參數(shù)資料
| 型號： | QM50TB-2H |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 122 x 32 pixel format, Compact LCD size |
| 中文描述： | 中功率開關(guān)使用絕緣型 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 86K |
| 代理商： | QM50TB-2H |
Feb.1999
Symbol
V
CEX (SUS)
V
CEX
V
CBO
V
EBO
I
C
–I
C
P
C
I
B
–I
CSM
T
j
T
stg
V
iso
—
—
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Ratings
1000
1000
1000
7
50
50
400
3
500
–40~+150
–40~+125
2500
0.98~1.47
10~15
1.47~1.96
15~20
660
Conditions
I
C
=1A, V
EB
=2V
V
EB
=2V
Emitter open
Collector open
DC
DC (forward diode current)
T
C
=25
°
C
DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Main terminal screw M4
Mounting screw M5
Typical value
ABSOLUTE MAXIMUM RATINGS
(Tj=25
°
C, unless otherwise noted)
Unit
V
V
V
V
A
A
W
A
A
°
C
°
C
V
N·m
kg·cm
N·m
kg·cm
g
MITSUBISHI TRANSISTOR MODULES
QM50TB-2H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
ELECTRICAL CHARACTERISTICS
(Tj=25
°
C, unless otherwise noted)
Unit
mA
mA
mA
V
V
V
—
μ
s
μ
s
μ
s
°
C/W
°
C/W
°
C/W
Limits
Min.
—
—
—
—
—
—
75/100
—
—
—
—
—
—
Symbol
I
CEX
I
CBO
I
EBO
V
CE (sat)
V
BE (sat)
–V
CEO
h
FE
t
on
t
s
t
f
R
th (j-c) Q
R
th (j-c) R
R
th (c-f)
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
Test conditions
V
CE
=1000V, V
EB
=2V
V
CB
=1000V, Emitter open
V
EB
=7V
I
C
=50A, I
B
=1A
–I
C
=50A (diode forward voltage )
I
C
=50A, V
CE
=2.8V/5V
V
CC
=600V, I
C
=50A, I
B1
=–I
B2
=1A
Transistor part (per 1/6 module)
Diode part (per 1/6 module)
Conductive grease applied (per 1/6 module)
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
1.0
1.0
200
2.5
3.5
1.8
—
2.5
15
3.0
0.31
1.2
0.2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| QM50TB24 | TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CEO | 50A I(C) |
| QM50TB24B | TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CEO | 50A I(C) |
| QM50TB2HB | TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CEO | 50A I(C) |
| QM50TF-HB | MEDIUM POWER SWITCHING USE INSULATED TYPE |
| QM50TX-HB | 240 x 128 pixel format, LED or EL Backlight |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| QM50TB2HB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CEO | 50A I(C) |
| QM50TB-2HB | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER SWITCHING USE INSULATED TYPE |
| QM50TF-HB | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER SWITCHING USE INSULATED TYPE |
| QM50TX-H | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER SWITCHING USE INSULATED TYPE |
| QM50TX-HB | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER SWITCHING USE INSULATED TYPE |
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