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參數(shù)資料
| 型號(hào)： | QM75CY-H |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | HIGH POWER SWITCHING USE INSULATED TYPE |
| 中文描述： | 大功率開(kāi)關(guān)使用絕緣型 |
| 文件頁(yè)數(shù)： | 4/5頁(yè) |
| 文件大小： | 72K |
| 代理商： | QM75CY-H |
Feb.1999
–3
10
–2
10
7
–1
10
3
10
2
10
1
10
0
10
0
10
1
10
3
10
2
10
–1
10
100
80
60
40
20
00
20
60
100 120
160
40
80
140
10
30
50
70
90
160
00
200
400
600
800
120
80
40
140
100
60
20
I
B2
=–2A
100
300
500
700
–5A
T
C
=125°C
1
10
7
5
4
3
2
10
7
5
4
3
2
2 3 4 5 7
0
10
2 3 4 5 7
1
10
2
t
s
t
f
V
CC
=300V
I
C
=75A
I
B1
=1.5A
T
j
=25°C
T
j
=125°C
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
4
4
4
T
C
=25°C
NON–REPETITIVE
100μs
1ms
DC
10m
500μs
7
5
3
2
7
5
3
2
5
3
2
0.5
0.4
0.3
0.1
0
7
5
3
2
10
10
10
4
4
4
4
2
0.2
2
10
7
5
4
3
2
10
7
5
4
3
2
0
2.0
1.6
1.2
0.8
0.4
T
j
=25°C
T
j
=125°C
10
COLLECTOR
DISSIPATION
SECOND
BREAKDOWN
AREA
t
w
=50μs
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
S
t
s
,
f
μ
s
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
BASE REVERSE CURRENT
–I
B2
(A)
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF F. B. S. O. A.
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
CASE TEMPERATURE
T
C
(
°
C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
COLLECTOR-EMITTER REVERSE VOLTAGE
–V
CEO
(V)
TIME (s)
C
I
C
C
I
C
D
C
–
C
MITSUBISHI TRANSISTOR MODULES
QM75CY-H
HIGH POWER SWITCHING USE
INSULATED TYPE
Z
t
°
C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| QM75DY-24B | HIGH POWER SWITCHING USE INSULATED TYPE |
| QM75DY-24 | HIGH POWER SWITCHING USE INSULATED TYPE |
| QM75DY-2HB | HIGH POWER SWITCHING USE INSULATED TYPE |
| QM75DY-2H | HIGH POWER SWITCHING USE INSULATED TYPE |
| QM75DY-HB | HIGH POWER SWITCHING USE INSULATED TYPE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| QM75DY24 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1.2KV V(BR)CEO | 75A I(C) |
| QM75DY-24 | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| QM75DY24B | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1.2KV V(BR)CEO | 75A I(C) |
| QM75DY-24B | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| QM75DY-2H | 制造商:n/a 功能描述:Darlington Module 制造商:Mitsubishi Electric 功能描述: |
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