參數(shù)資料
型號(hào): QM75DY-2H
廠商: Mitsubishi Electric Corporation
英文描述: HIGH POWER SWITCHING USE INSULATED TYPE
中文描述: 大功率開(kāi)關(guān)使用絕緣型
文件頁(yè)數(shù): 5/5頁(yè)
文件大?。?/td> 83K
代理商: QM75DY-2H
Feb.1999
–1
10
–2
10
7
–3
10
0
10
0
10
1
10
–1
10
1
10
0
10
2
10
10
7
5
4
3
2
10
7
5
4
3
2
0
800
700
600
500
400
300
200
100
2
10
7
5
4
3
2
10
7
5
4
3
2
0
10
10
0
2 3 4 5 7
1
10
2 3 4 5 7
10
V
CC
=600V
I
B1
=–I
B2
=1.5A
T
j
=25°C
T
j
=125°C
I
rr
t
rr
Q
rr
7
5
3
2
7
5
3
2
5
3
2
2.0
1.6
1.2
0.8
0.4
0
4
4
4
2 3 45 7
7
5
3
2
4
I
r
r
μ
c
S
C
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE)
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
CONDUCTION TIME (CYCLES AT 60Hz)
FORWARD CURRENT
I
F
(A)
TIME (s)
MITSUBISHI TRANSISTOR MODULES
QM75DY-2H
HIGH POWER SWITCHING USE
INSULATED TYPE
Z
t
°
C
t
r
μ
s
相關(guān)PDF資料
PDF描述
QM75DY-HB HIGH POWER SWITCHING USE INSULATED TYPE
QM75DY-H HIGH POWER SWITCHING USE INSULATED TYPE
QM75DY24 TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1.2KV V(BR)CEO | 75A I(C)
QM75DY24B TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1.2KV V(BR)CEO | 75A I(C)
QM75DY2HB TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1KV V(BR)CEO | 75A I(C)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
QM75DY2HB 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1KV V(BR)CEO | 75A I(C)
QM75DY-2HB 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE
QM75DY-H 制造商:n/a 功能描述:Darlington Module
QM75DY-HB 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE
QM75E2Y2H 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT POWER MODULE | DARLINGTON | 1KV V(BR)CEO | 75A I(C)