參數(shù)資料
型號: QM75E2Y-2H
廠商: Mitsubishi Electric Corporation
英文描述: HIGH POWER SWITCHING USE INSULATED TYPE
中文描述: 大功率開關(guān)使用絕緣型
文件頁數(shù): 5/6頁
文件大?。?/td> 104K
代理商: QM75E2Y-2H
Feb.1999
PERFORMANCE CURVES (Diode part (D1))
MITSUBISHI TRANSISTOR MODULES
QM75E2Y/E3Y-2H
HIGH POWER SWITCHING USE
INSULATED TYPE
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
1
10
10
7
5
3
2
0.32
Z
t
°
C
TIME (s)
FORWARD CHARACTERISTICS
(TYPICAL)
MAXIMUM SURGE CURRENT
F
I
F
CONDUCTION TIME
(CYCLES AT 60Hz)
FORWARD VOLTAGE
V
F
(A)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC
1
10
10
2.0
FORWARD CURRENT
I
F
(A)
TIME (s)
I
r
r
μ
c
S
I
F
Z
t
°
C
t
r
μ
s
–1
10
2
10
10
10
0
–3
10
–2
10
–1
10
0
10
0
10
–1
10
–2
10
–3
10
0
2
10
10
7
5
4
3
2
0
10
7
5
4
3
2
0
0.4
0.8
1.2
1.6
2.0
T
j
=25°C
T
j
=125°C
2
10
10
7
5
4
3
2
10
7
5
4
3
2
0
800
100
200
300
500
400
600
700
2
10
7
5
4
3
2
10
7
5
4
3
2
0
10
10
0
2 3 4 5 7
1
10
2 3 4 5 7
T
j
=25°C
T
j
=125°C
V
CC
=600V
I
B1
=–I
B2
=1.5A
I
rr
Q
rr
t
rr
7
5
7
5
3
2
7
5
3
2
7
5
3
2
0.4
0.8
1.2
1.6
0
3
2
7
5
3
2
4
4
4
4
4
7
5
3
2
7
5
3
2
7
5
3
2
0
4
4
4
4
0.28
0.24
0.20
0.16
0.12
0.08
0.04
相關(guān)PDF資料
PDF描述
QM75E2Y-H HIGH POWER SWITCHING USE INSULATED TYPE
QM75E2Y2H TRANSISTOR | BJT POWER MODULE | DARLINGTON | 1KV V(BR)CEO | 75A I(C)
QM75E3Y2H TRANSISTOR | BJT POWER MODULE | DARLINGTON | 1KV V(BR)CEO | 75A I(C)
QM75E3Y-2H HIGH POWER SWITCHING USE INSULATED TYPE
QM75E3Y-H HIGH POWER SWITCHING USE INSULATED TYPE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
QM75E2Y-H 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE
QM75E3Y2H 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT POWER MODULE | DARLINGTON | 1KV V(BR)CEO | 75A I(C)
QM75E3Y-2H 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE
QM75E3Y-H 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE
QM75HA-H 制造商:n/a 功能描述:Darlington Module