參數(shù)資料
型號(hào): QM75E3Y-H
廠商: Mitsubishi Electric Corporation
英文描述: HIGH POWER SWITCHING USE INSULATED TYPE
中文描述: 大功率開關(guān)使用絕緣型
文件頁(yè)數(shù): 3/6頁(yè)
文件大小: 100K
代理商: QM75E3Y-H
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM75E2Y/E3Y-H
HIGH POWER SWITCHING USE
INSULATED TYPE
ELECTRICAL CHARACTERISTICS
(Diode part (D2), T
j
=25
°
C)
Symbol
I
RRM
V
FM
t
rr
Q
rr
R
th (j-c)
R
th (c-f)
Parameter
Repetitive peak reverse current
Forward voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
Contact thermal resistance
Test conditions
V
R
=V
RRM
, T
j
=150
°
C
I
F
=75A
I
F
=75A, di/dt=–150A/
μ
s, V
R
=300V, T
j
=150
°
C
Junction to case
Conductive grease applied (case to fin)
Unit
mA
V
μ
s
μ
C
°
C/W
°
C/W
Limits
Min.
Typ.
Max.
1.0
1.5
0.9
30
0.6
0.15
PERFORMANCE CURVES
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
C
I
C
D
h
F
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(A)
B
I
B
S
V
C
,
B
COLLECTOR CURRENT
I
C
(A)
BASE-EMITTER VOLTAGE
V
BE
(V)
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
10
10
7
5
4
3
2
–1
10
7
5
4
3
2
1.0
1.4
1.8
2.2
2.6
3.0
V
CE
=2.0V
T
j
=25°C
200
160
120
80
40
00
1
2
3
4
5
T
j
=25°C
I
B
=2.0A
I
B
=1.5A
I
B
=1.0A
I
B
=0.5A
3
10
7
5
4
3
2
2
10
7
5
4
3
2
10
0
2 3 4 5 7
1
10
2 3 4 5 7
2
10
2
V
CE
=5.0V
T
j
=25°C
T
j
=125°C
V
CE
=2.0V
1
10
7
5
4
3
2
10
7
5
4
3
2
–1
10
1
10
2 3 4 5 7
2
10
2 3 4 5 7
3
10
T
j
=25°C
T
j
=125°C
V
BE(sat)
V
CE(sat)
I
B
=1A
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