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參數(shù)資料
| 型號(hào)： | QM75TF-HB |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | HIGH POWER SWITCHING USE INSULATED TYPE |
| 中文描述： | 大功率開(kāi)關(guān)使用絕緣型 |
| 文件頁(yè)數(shù)： | 3/5頁(yè) |
| 文件大小： | 87K |
| 代理商： | QM75TF-HB |
Feb.1999
–1
7
5
4
3
2
10
–3
10
–2
10
–1
10
0
10
10
7
5
4
3
2
–2
10
2.0
2.4
2.8
3.2
3.6
4.0
V
CE
=2.5V
T
j
=25°C
1
10
7
5
4
3
2
10
7
5
4
3
2
–1
10
0
10
2 3 4 5 7
1
10
2 3 4 5 7
2
10
V
CE(sat)
V
BE(sat)
T
j
=25°C
T
j
=125°C
I
B
=100mA
4
10
7
5
4
3
2
3
10
7
5
4
3
2
2
2 3 4 5 7
1
10
2 3 4 5 7
2
10
T
j
=25°C
T
j
=125°C
V
CE
=5.0V
V
CE
=2.5V
2
200
160
120
80
40
00
1
2
3
4
5
T
j
=25°C
I
B
=50mA
I
B
=20mA
I
B
=10mA
I
B
=200mA
I
B
=100mA
0
7
5
3
2
7
5
3
2
7
5
3
2
5
4
3
2
1
4
4
4
I
C
=75A
T
j
=25°C
T
j
=125°C
I
C
=30A
I
C
=50A
1
10
7
5
4
3
2
10
7
5
4
3
2
–1
10
0
10
2 3 4 5 7
1
10
2 3 4 5 7
2
10
t
f
t
on
t
s
T
j
=25°C
T
j
=125°C
I
B2
=–1.5A
V
CC
I
B1
=300V
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
C
I
C
D
h
F
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(A)
B
I
B
C
V
V
C
S
V
C
,
B
S
t
o
,
s
,
f
μ
s
COLLECTOR CURRENT
I
C
(A)
BASE-EMITTER VOLTAGE
V
BE
(V)
BASE CURRENT
I
B
(A)
COLLECTOR CURRENT
I
C
(A)
MITSUBISHI TRANSISTOR MODULES
QM75TF-HB
HIGH POWER SWITCHING USE
INSULATED TYPE
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| QM800HA24B | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT POWER MODULE | DARLINGTON | 1.2KV V(BR)CEO | 800A I(C) |
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