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參數(shù)資料
| 型號： | QM80DY-3H |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | HIGH POWER SWITCHING USE INSULATED TYPE |
| 中文描述： | 大功率開關使用絕緣型 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 90K |
| 代理商： | QM80DY-3H |
Feb.1999
0
10
0
10
7
5
3
2
10
7
–1
7
5
3
2
10
–2
7
5
3
2
10
–3
10
10
–3
–2
10
–1
10
7
0
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
10
1
10
2
10
3
10
100
80
60
40
20
00
20
60
100 120
160
40
80
140
10
30
50
70
90
2
10
7
5
4
3
2
10
7
5
4
3
2
3 4 5 7
0
10
2 3 4 5 7
1
10
–1
10
2
10
t
s
T
j
=25°C
T
j
=125°C
I
B1
=1.6A
V
CC
=800V
I
C
=80A
t
f
200
00
2000
1600
1200
800
400
40
80
120
160
T
j
=125°C
I
B2
=–4A
7
5
3
2
7
5
3
2
7
5
3
2
4
4
4
2
T
C
=25°C
NON–REPETITIVE
DC
1m
20s
50s
5μ
2
10
10
7
5
4
3
2
10
7
5
4
3
2
0
0.4
0.8
1.2
1.6
2.0
T
j
=25°C
T
j
=125°C
7
5
3
2
5
3
2
7
5
3
2
4
4
4
5
3
2
5
3
2
4
4
COLLECTOR
DISSIPATION
SECOND
BREAKDOWN
AREA
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
S
t
s
,
f
μ
s
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
BASE REVERSE CURRENT
–I
B2
(A)
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF F. B. S. O. A.
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
CASE TEMPERATURE
T
C
(
°
C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
COLLECTOR-EMITTER REVERSE VOLTAGE
–V
CEO
(V)
TIME (s)
C
I
C
C
I
C
D
C
–
C
MITSUBISHI TRANSISTOR MODULES
QM80DY-3H
HIGH POWER SWITCHING USE
INSULATED TYPE
Z
t
°
C
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