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參數(shù)資料
| 型號： | QPAV8a2S.1R |
| 廠商： | Conexant Systems, Inc. |
| 英文描述： | 40 GHz Power Amplifier(工作頻率從39GHz到41GHz的低噪聲功率放大器) |
| 中文描述： | 40 GHz功率放大器（工作頻率從39GHz到41GHz的低噪聲功率放大器） |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 41K |
| 代理商： | QPAV8A2S.1R |
40 GHz Power Amplifier
02/28/00
Preliminary Specifications – Subject to Change
qpav8a2s.1r
page 2
RF and Electrical Specifications
Conditions T base = 25
°
C, Z source = Z load 50 +/- 5
Symbol
Parameters/Conditions
Min
Typ
Max
Units
V
d
1 2
Drain Supply Voltage
2.5
4
6
Volts
V
g
1 2
Gate Supply Voltage
-0.6
-0.2
0.0
Volts
ID total
Total drain current (@ typ Vgs)
0.35
0.6
1.2
A
Frequency
Specified Bandwidth edges
39
41
GHz
Gain**
Small signal
15
16
dB
Gain
Small signal gain flatness
<1
1.2
dB/GHz
P1dB(note 1)
Power output at 1dB gain compression
29
30
dBm
RL in
Input port return loss
8
10
dB
RL out
Output port return loss
8
10
dB
Isolation
Reverse isolation
30
40
dB
(Note 1)
These measurements will be carried out on a sampled basis. A random representative sample of die is
mounted and tested for power out and 1 dB gain compression.
(***)
Rockwell Science Center reserves the right to make improvements in this device,
including die size reduction, while maintaining all RF & DC specifications. The
General Notes on Rockwell PHEMT Products will be supplied upon user’s request .
In addition to inspection criteria it will contain descriptions, biasing instructions,
reliability data.
Each die is fully DC tested and RF S-parameters are measured. Full 2-port S-parameter data on
individual die will be supplied.
All dies will pass visual inspection as dictated by the rules contained in Section A of the General
Notes on Rockwell PHEMT Products (applicable sections of MIL-I-45208)
Every die has a unique identifier number on-chip for complete traceability.
A conductive epoxy or a flux-less solder die attach is recommended. The die should be attached to an
electrically conductive surface to complete DC and RF ground paths. The ground path inductance
should be minimized (<10 pH) to assure stability.
The front side metal is compatible with thermo-sonic 1 mil wire bonding. The backside metal is
compatible with die attach methods not exceeding Tmax .
GaAs MMICs are ESD sensitive. Proper precautions should be used when handling these devices.
Front and backside metal is Gold.
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