參數(shù)資料
型號: QRB1113
廠商: Fairchild Semiconductor Corporation
英文描述: PHOTOTRANSISTOR REFLECTIVE OBJECT SENSOR
中文描述: 光電傳感器反射對象
文件頁數(shù): 1/4頁
文件大?。?/td> 314K
代理商: QRB1113
PACKAGE DIMENSIONS
SCHEMATIC
PHOTOTRANSISTOR
REFLECTIVE OBJECT SENSOR
QRB1113 QRB1114
3/5/02 DS300350
Page 1 of 4
2002 Fairchild Semiconductor Corporation
E
S
DESCRIPTION
The QRB1113/1114 consists of an infrared emitting diode and an NPN silicon phototransistor mounted side by side on a converg-
ing optical axis in a black plastic housing. The phototransistor responds to radiation from the emitting diode only when a reflective
object passes within its field of view. The area of the optimum response approximates a circle .200" in diameter.
FEATURES
No contact surface sensing
Phototransistor output
Focused for sensing specular reflection
Daylight filter on photosensor
Dust cover
0.210 (5.33)
0.420 (10.67)
0.328 (8.33)
0.373 (9.47)
0.703 (17.86)
0.150 (3.81)
MIN
0.603 (15.32)
0.300 (7.62)
0.226 (5.74)
0.150 (3.81)
NOM
0.020 (0.51)
4X
PIN1 ANODE
PIN2 CATHODE
PIN3 EMITTER
PIN4 COLLECTOR
PIN 1
PIN 2
PIN 3
PIN 4
REFLECTIVE
SURFACE
E
S
1
2
3
4
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless
otherwise speci
fi
ed.
相關PDF資料
PDF描述
QRB1114 PHOTOTRANSISTOR REFLECTIVE OBJECT SENSOR
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相關代理商/技術參數(shù)
參數(shù)描述
QRB1113_Q 功能描述:光學開關(反射型,光電晶體管輸出) REFLECTIVE SENSOR RoHS:否 制造商:Fairchild Semiconductor 感應距離:1 mm 輸出設備:Phototransistor 集電極—發(fā)射極最大電壓 VCEO:30 V 最大集電極電流:20 mA 正向電壓:1.2 V 反向電壓:5 V 最大工作溫度:+ 85 C 最小工作溫度:- 25 C 安裝風格:SMD/SMT 封裝:Reel
QRB1114 功能描述:光學開關(反射型,光電晶體管輸出) PHOTO TRANS RoHS:否 制造商:Fairchild Semiconductor 感應距離:1 mm 輸出設備:Phototransistor 集電極—發(fā)射極最大電壓 VCEO:30 V 最大集電極電流:20 mA 正向電壓:1.2 V 反向電壓:5 V 最大工作溫度:+ 85 C 最小工作溫度:- 25 C 安裝風格:SMD/SMT 封裝:Reel
QRB1114 制造商:Fairchild Semiconductor Corporation 功能描述:OPTOSWITCH ROHS COMPLIANT:NO
QRB1114 制造商:Fairchild Semiconductor Corporation 功能描述:OPTOSWITCH OPTOCOUPLER ((NW))
QRB1114_Q 功能描述:光學開關(反射型,光電晶體管輸出) PHOTO TRANS RoHS:否 制造商:Fairchild Semiconductor 感應距離:1 mm 輸出設備:Phototransistor 集電極—發(fā)射極最大電壓 VCEO:30 V 最大集電極電流:20 mA 正向電壓:1.2 V 反向電壓:5 V 最大工作溫度:+ 85 C 最小工作溫度:- 25 C 安裝風格:SMD/SMT 封裝:Reel