參數(shù)資料
型號(hào)： QRE1113.GR
廠商： Fairchild Semiconductor Corporation
英文描述： REFLECTIVE OBJECT SENSOR
中文描述： 反省的對(duì)象傳感器
文件頁(yè)數(shù)： 2/5頁(yè)
文件大?。?/td> 337K
代理商： QRE1113.GR
12/9/02
Page 2 of 5
2002 Fairchild Semiconductor Corporation
REFLECTIVE OBJECT SENSOR
QRE1113.GR
NOTES:
1. Derate power dissipation linearly 1.33 mW/
°
C above 25
°
C.
2. RMA
fl
ux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16
”
(1.6mm) from housing.
5. Pulse conditions: tp = 100 μs; T = 10 ms.
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25
°
C unless otherwise speci
fi
ed)
Parameter
Symbol
Rating
Units
Operating Temperature
T
OPR
T
STG
T
SOL-I
T
SOL-F
-25 to +85
°
C
Storage Temperature
-30 to +100
°
C
Soldering Temperature (Iron)
(2,3,4)
240 for 5 sec
°
C
Soldering Temperature (Flow)
EMITTER
(2,3)
260 for 10 sec
°
C
Continuous Forward Current
I
F
50
mA
Reverse Voltage
V
R
5
V
Peak Forward Current
(5)
I
FP
P
1
mA
Power Dissipation
SENSOR
(1)
D
75
mW
Collector-Emitter Voltage
V
CEO
V
ECO
I
C
P
30
V
Emitter-Collector Voltage
5
V
Collector Current
20
mA
Power Dissipation
(1)
D
50
mW
ELECTRICAL / OPTICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise speci
fi
ed)
PARAMETER
TEST CONDITIONS
SYMBOL
MIN.
TYP.
MAX.
UNITS
INPUT DIODE
Forward Voltage
I
F
= 20 mA
V
F
—
1.2
1.6
V
Reverse Leakage Current
V
R
= 20 mA
= 5 V
I
R
—
—
10
μA
Peak Emission Wavelength
OUTPUT TRANSISTOR
I
F
λ
PE
—
940
—
nm
Collector-Emitter Dark Current
COUPLED
V
CE
= 20 V, I
F
= 0 mA
I
D
—
—
100
nA
On-State Collector Current
I
F
= 20 mA, V
CE
= 5 V
I
C(ON)
0.15
0.40
—
mA
Saturation Voltage
V
CE (SAT)
t
r
t
f
—
—
0.3
V
Rise Time
V
R
CC
L
= 1K
= 5 V, I
C(ON)
= 100 μA,
—
20
—
μs
Fall Time
—
20
—
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