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參數(shù)資料
| 型號： | QS5U28 |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | Small switching (−20V, −2.0A) |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 88K |
| 代理商： | QS5U28 |
QS5U28
Transistor
z
Absolute maximum ratings
(Ta=25
°
C)
<
MOSFET
>
2/4
1
1
3
3
3
2
Parameter
V
V
A
A
A
A
°
C
V
DSS
V
GSS
I
D
I
DP
I
S
I
SP
Tch
Symbol
20
±
12
±
2.0
±
8.0
1.0
8.0
150
P
D
0.9
V
V
A
A
°
C
V
RM
V
R
I
F
I
FSM
Tj
25
20
1.0
3.0
150
P
D
0.7
P
D
Tstg
1.25
°
C
55 to
+
150
Limits
Unit
W/ TOTAL
W/ELEMENT
W/ELEMENT
1 Pw
≤
10
μ
s, Duty cycle
≤
1%
2 60Hz
1cyc.
3 Mounted on a ceramic board.
z
Electrical characteristics
(Ta=25
°
C)
<
MOSFET
>
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Power dispation
<
Di
>
Channel temperature
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
Power dispation
<
MOSFET AND Di
>
Total power dispation
Range of strage temperature
Continuous
Pulsed
Continuous
Pulsed
Parameter
Symbol
Limits
Unit
Parameter
Symbol
Limits
Unit
Parameter
Symbol
I
GSS
V
(BR) DSS
I
DSS
V
GS (th)
Y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
Q
g
Min.
20
0.7
1.6
±
10
1
2.0
125
135
245
μ
A
V
μ
A
V
m
m
m
S
pF
pF
pF
ns
ns
ns
ns
nC
V
GS
=
±
12V, V
DS
= 0V
I
D
=
1mA, V
GS
= 0V
V
DS
=
20V, V
GS
= 0V
V
DS
=
10V, I
D
=
1mA
I
D
=
2A, V
GS
=
4.5V
I
D
=
2A, V
GS
=
4.0V
I
D
=
1A, V
GS
=
2.5V
V
DS
=
10V, I
D
=
1A
V
DS
=
10V
V
GS
= 0V
f=1MHz
V
DD
15
V
V
GS
=
4.5V
V
DD
15
V
V
GS
4.5V
I
D
=
2A
Typ.
Max.
Unit
Conditions
90
97
175
450
70
52
10
16
32
15
4.8
R
DS (on)
I
S
=
1.0V , V
GS
= 0V
I
D
=
1A
R
L
15
R
G
= 10
1.0
R
L
7.5
R
G
= 10
Q
gs
1.3
nC
Q
gd
nC
Parameter
Symbol
V
SD
Min.
Typ.
Max.
1.2
Unit
V
Conditions
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-starte
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Tum-on delay time
Rise time
Tum-off delay time
Fall time
Total gate charge
Gate-source
charge
Gate-drain
charge
<
MOSFET
>
Body diode (Source-drain)
Forward voltage
Pulsed
I
S
=
1.0V
V
R
= 20V
Parameter
Symbol
V
F
I
R
Min.
Typ.
Max.
0.45
200
Unit
V
μ
A
Conditions
Forward voltage
Reverse leakage
<
Di
>
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