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參數(shù)資料
| 型號(hào)： | QS6U22 |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | Small switching (−20V, −1.5A) |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 60K |
| 代理商： | QS6U22 |
QS6U22
Transistors
Small switching (
20V,
1.5A)
1/3
QS6U22
!
Features
1) The QS6U22 combines Pch MOSFET with a
Schottky barrier diode in a single TSMT6 package.
2) Pch Treueh MOSFET have a low on-state resistance
with a fast switching.
3) Nch Treueh MOSFET is reacted a low voltage drive
(4V).
4) The Independently connected Schottky barrier diode
have a low forward voltage.
!
Applications
Load switch, DC / DC conversion
!
Structure
Silicon P-channel MOSFET
Schottky Barrier DIODE
!
Packaging specifications
Package
Code
Taping
TR
3000
Basic ordering unit (pieces)
QS6U22
Type
!
External dimensions
(Unit : mm)
Each lead has same dimensions
TSMT6
Abbreviated symbol : U22
0
0
2
2.8
1.6
0
(
(
(
(
(
(
1pin mark
!
Equivalent circuit
2
1
(1)
(2)
(5)
(3)
(6)
(4)
A protection diode has been in between the gate and
the source to protect against static electricity when the product
is in use. Use the protection circuit when rated voltages are exceeded.
(1) Anode
(2) Source
(3) Gate
(4) Drain
(5) N / C
(6) Cathode
1 ESD PROTECTION DIODE
2 BODY DIODE
!
Absolute maximum ratings
(Ta=25
°
C)
MOSFET
Channel temperature
Di
Total power dissipation
Range of Storage temperature
1 Pw
≤
10
μ
s, Duty cycle
≤
1%
2 60Hz
1cyc.
3 Total mounted on a ceramic board
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Continuous
Pulsed
Source current
(Body diode)
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
MOSFET AND Di
V
RM
V
R
I
F
I
FSM
Tj
Parameter
V
V
A
A
A
A
°
C
V
DSS
V
GSS
I
D
I
DP
I
S
I
SP
Tch
Symbol
20
±
12
±
1.5
±
6.0
0.75
6.0
150
V
A
A
°
C
20
0.7
3.0
150
V
25
Limits
Unit
W / Total
°
C
P
D
Tstg
1.25
55 to
+
150
Parameter
Symbol
Limits
Unit
Parameter
Symbol
Limits
Unit
1
1
2
3
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| QS6U22_1 | 制造商:ROHM 制造商全稱:Rohm 功能描述:2.5V Drive Pch+SBD MOS FET |
| QS6U22TR | 功能描述:MOSFET P-CH 20V 1.5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| QS6U24 | 制造商:ROHM 制造商全稱:Rohm 功能描述:Small switching (-30V, -1A) |
| QS6U24_1 | 制造商:ROHM 制造商全稱:Rohm 功能描述:4V Drive Pch+SBD MOS FET |
| QS6U24TR | 功能描述:MOSFET P-CH 30V 1A TSMT6 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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