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參數(shù)資料
| 型號： | QSC112 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 光敏三極管 |
| 英文描述： | PLASTIC SILICON INFRARED PHOTOTRANSISTOR |
| 中文描述： | PHOTO TRANSISTOR DETECTOR |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 105K |
| 代理商： | QSC112 |
Parameter
Symbol
T
OPR
T
STG
T
SOL-I
T
SOL-F
V
CE
V
EC
P
D
Rating
-40 to +100
-40 to +100
240 for 5 sec
260 for 10 sec
30
5
100
Unit
°C
°C
°C
°C
V
V
mW
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)
(2,3,4)
Soldering Temperature (Flow)
(2,3)
Collector-Emitter Voltage
Emitter-Collector Voltage
Power Dissipation
(1)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
PLASTIC SILICON INFRARED
PHOTOTRANSISTOR
QSC112
QSC113
QSC114
www.fairchildsemi.com
2 OF 4
7/09/01
DS300358
ELECTRICAL / OPTICAL CHARACTERISTICS
(T
A
= 25°C)
PARAMETER
Peak Sensitivity Wavelength
Reception Angle
Collector-Emitter Dark Current
Collector-Emitter Breakdown
Emitter-Collector Breakdown
On-State On-State Collector QSC112
On-State On-State Collector QSC113
On-State On-State Collector QSC114
TEST CONDITIONS
SYMBOL
MIN
TYP
880
±8
—
—
—
—
—
—
MAX
—
—
100
—
—
4
9.60
—
UNITS
nm
Deg.
nA
V
V
!
PS
"
I
CEO
BV
CEO
BV
ECO
—
—
—
30
5
1
2.40
4.00
V
CE
= 10 V, Ee = 0
I
C
= 1 mA
I
E
= 100 μA
Ee = 0.5 mW/cm
2
,
V
CE
= 5 V
(5)
I
C(ON)
mA
Saturation Voltage
Ee = 0.5 mW/cm
2
,
I
C
= 0.5 mA
(5)
V
CC
= 5 V, R
L
= 100
#
I
C
= 2 mA
V
CE(sat)
—
—
0.4
V
Rise Time
Fall Time
t
r
t
f
—
—
5.0
5.0
—
—
μs
1. Derate power dissipation linearly 1.33 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron
1/16”
(1.6mm) minimum from housing.
5.
!
= 880 nm, AlGaAs.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| QSC113 | PLASTIC SILICON INFRARED PHOTOTRANSISTOR |
| QSC114 | PLASTIC SILICON INFRARED PHOTOTRANSISTOR |
| QSC112 | PLASTIC SILICON PHOTOTRANSISTOR |
| QSC113 | PLASTIC SILICON PHOTOTRANSISTOR |
| QSC114 | PLASTIC SILICON PHOTOTRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| QSC112_0056K | 制造商:Fairchild Semiconductor Corporation 功能描述:PHOTOTRANSISTOR IR CHIP PLASTIC SILICON NPN TRANSISTOR 880NM - Bulk |
| QSC112_06 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Plastic Silicon Infrared Phototransistor |
| QSC112_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Plastic Silicon Infrared Phototransistor |
| QSC112CC6R0 | 功能描述:光電晶體管 DETECTOR IR-Si T1 16DEG 24.5MM LEADS RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| QSC113 | 功能描述:光電晶體管 2.4mA PHOTO TRANS RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
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