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參數(shù)資料
| 型號： | QSC112 |
| 廠商： | QT OPTOELECTRONICS |
| 元件分類： | 光敏三極管 |
| 英文描述： | PLASTIC SILICON PHOTOTRANSISTOR |
| 中文描述： | PHOTO TRANSISTOR DETECTOR |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 105K |
| 代理商： | QSC112 |
DS300358
7/09/01
3 OF 4
www.fairchildsemi.com
PLASTIC SILICON INFRARED
PHOTOTRANSISTOR
QSC112
QSC113
QSC114
Figure 1. Light Current vs. Radiant Intensity
Figure 3. Dark Current vs. Collector - Emitter Voltage
Figure 4. Light Current vs. Collector - Emitter Voltage
Figure 5. Dark Current vs. Ambient Temperature
Figure 2. Angular Response Curve
0.0
0.2
0.4
0.6
0.8
1.0
0.2
0.4
0.6
0.8
1.0
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
160
170
180
V
CE
- Collector-Emitter Voltage (V)
0
5
10
15
20
25
30
I
C
-
10
-3
10
-2
10
-1
10
0
10
1
V
CE
- Collector-Emitter Voltage (V)
0.1
1
10
I
L
-
10
-2
10
-1
10
0
10
1
Normalized to:
V
CE
= 5V
Ie = 0.5mW/cm
2
T
A
= 25
o
C
Ie = 0.5mW/cm
2
Ie = 0.2mW/cm
2
Ie = 0.1mW/cm
2
Ie = 1mW/cm
2
T
A
- Ambient Temperature (
o
C)
25
50
75
100
I
C
10
-1
10
0
10
1
10
2
10
3
10
4
Normalized to:
V
CE
= 25V
T
A
= 25
C
V
CE
= 25V
V
CE
= 10V
E
e
- Radiant Intensity (mW/cm
2
)
0.1
1
I
C
-
10
-1
10
0
10
1
10
2
V
= 5V
GaAs Light Source
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| QSC113 | PLASTIC SILICON PHOTOTRANSISTOR |
| QSC114 | PLASTIC SILICON PHOTOTRANSISTOR |
| QSC133 | PLASTIC SILICON PHOTODARLINGTON |
| QSD124 | PLASTIC SILICON INFRARED PHOTOTRANSISTOR |
| QSD122 | PLASTIC SILICON INFRARED PHOTOTRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| QSC112_0056K | 制造商:Fairchild Semiconductor Corporation 功能描述:PHOTOTRANSISTOR IR CHIP PLASTIC SILICON NPN TRANSISTOR 880NM - Bulk |
| QSC112_06 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Plastic Silicon Infrared Phototransistor |
| QSC112_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Plastic Silicon Infrared Phototransistor |
| QSC112CC6R0 | 功能描述:光電晶體管 DETECTOR IR-Si T1 16DEG 24.5MM LEADS RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| QSC113 | 功能描述:光電晶體管 2.4mA PHOTO TRANS RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
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