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參數(shù)資料
| 型號： | QSD122 |
| 廠商： | QT OPTOELECTRONICS |
| 元件分類： | 光敏三極管 |
| 英文描述： | PLASTIC SILICON PHOTOTRANSISTOR |
| 中文描述： | PHOTO TRANSISTOR DETECTOR |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 93K |
| 代理商： | QSD122 |
www.fairchildsemi.com
4 OF 4
7/20/01
DS300361
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF
OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD
SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical
implant into the body,or (b) support or sustain life,
and (c) whose failure to perform when properly
used in accordance with instructions for use provided
in labeling, can be reasonably expected to result in a
significant injury of the user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PLASTIC SILICON INFRARED
PHOTOTRANSISTOR
QSD122
QSD123
QSD124
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| QSD128 | PLASTIC SILICON PHOTOTRANSISTOR |
| QSD2030F | Plastic Silicon Photodiode |
| QSD2030 | PLASTIC SILICON PHOTODIODE |
| QSD422 | PLASTIC SILICON PHOTOTRANSISTOR |
| QSD423 | PLASTIC SILICON PHOTOTRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| QSD122_Q | 功能描述:光電晶體管 1mA PHOTO TRANS RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| QSD122A4R0 | 功能描述:光電晶體管 Phototrans IR Chip NPN Transistor 880nm RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| QSD123 | 功能描述:光電晶體管 4mA PHOTO TRANS RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| QSD123_Q | 功能描述:光電晶體管 4mA PHOTO TRANS RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| QSD123A4R0 | 功能描述:光電晶體管 Phototrans IR Chip NPN Transistor 880nm RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
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