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參數(shù)資料
| 型號： | QSE114 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 光敏三極管 |
| 英文描述： | PLASTIC SILICON INFRARED PHOTOTRANSISTOR |
| 中文描述： | PHOTO TRANSISTOR DETECTOR |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 320K |
| 代理商： | QSE114 |
5/1/02
Page 2 of 4
2002 Fairchild Semiconductor Corporation
PLASTIC SILICON
INFRARED PHOTOTRANSISTOR
QSE113 QSE114
NOTES:
1. Derate power dissipation linearly 1.33 mW/
°
C above 25
°
C.
2. RMA
fl
ux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16" (1.6 mm) minimum from housing.
5.
λ
= 880 nm (AlGaAs).
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25
°
C unless otherwise speci
fi
ed)
Parameter
Symbol
Rating
Unit
Operating Temperature
T
OPR
T
STG
-40 to +100
°
C
Storage Temperature
-40 to +100
°
C
Soldering Temperature (Iron)
(2,3,4)
T
SOL-I
240 for 5 sec
°
C
Soldering Temperature (Flow)
(2,3)
T
SOL-F
260 for 10 sec
°
C
Collector Emitter Voltage
V
CE
30
V
Emitter Collector Voltage
V
EC
5
V
Power Dissipation
(1)
P
D
100
mW
ELECTRICAL / OPTICAL CHARACTERISTICS
(T
A
=25
°
C unless otherwise speci
fi
ed)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Units
Peak Sensitivity
λ
PS
Θ
—
880
—
nM
Reception Angle
—
±25
—
Deg.
Collector Emitter Dark Current
V
CE
= 1 mA
= 10 V, E
e
= 0
I
CEO
BV
—
—
100
nA
Collector-Emitter Breakdown
I
C
I
E
CEO
30
—
—
V
Emitter-Collector Breakdown
= 100 μA
BV
ECO
5
—
—
V
On-State Collector Current
QSE113
(5)
E
e
= 0.5 mW/cm
2
, V
CE
= 5 V
I
C(ON)
0.25
—
1.50
mA
On-State Collector Current
QSE114
(5)
E
e
= 0.5 mW/cm
2
, V
CE
= 5 V
I
C(ON)
1.00
—
—
mA
Saturation Voltage
(5)
E
e
= 0.5 mW/cm
2
, I
C
= 0.1 mA
V
CE(SAT)
—
—
0.4
V
Rise Time
I
C
= 1mA, V
CC
= 5V, R
L
= 100
t
r
—
8
—
μs
Fall Time
t
f
—
8
—
μs
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| QSE113 | SIDELOODER PHOTOTRANSISTOR |
| QSE114 | SIDELOODER PHOTOTRANSISTOR |
| QSE122 | PLASTIC SILICON INFRARED PHOTOTRANSISTOR |
| QSE122 | SIDELOOKE PHOTOTRANSISTOR |
| QSE123 | SIDELOOKE PHOTOTRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| QSE114_1 | 制造商:Fairchild Semiconductor Corporation 功能描述:Phototransistor IR Chip Silicon 880nm 2-Pin Side Looker Bulk |
| QSE114_Q | 功能描述:光電晶體管 1mA PHOTO TRANS RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| QSE114E3R0 | 功能描述:光電晶體管 1mA PHOTO TRANS RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| QSE122 | 功能描述:光電晶體管 3mA PHOTO TRANS RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| QSE122_Q | 功能描述:光電晶體管 3mA PHOTO TRANS RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
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