參數(shù)資料
型號: QT60160-ISG QS129
廠商: Atmel
文件頁數(shù): 17/26頁
文件大?。?/td> 0K
描述: SENSOR IC MTRX TOUCH16KEY 32-QFN
標(biāo)準(zhǔn)包裝: 1
系列: QMatrix™
類型: 電容性
輸入數(shù)/鍵: 16
分辨率(位): 10 b
評估套件: 可供
數(shù)據(jù)接口: I²C,串行,SPI?
電壓基準(zhǔn): 外部
電源電壓: 1.8V,3.3V,5V
電流 - 電源: 4.6mA
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 32-VFQFN
供應(yīng)商設(shè)備封裝: 32-QFN
包裝: 標(biāo)準(zhǔn)包裝
產(chǎn)品目錄頁面: 2822 (CN2011-ZH PDF)
其它名稱: 427-1125-6
7.5 Power Consumption
Table 7.1 Average Current Consumption
Test condition: BL = 48, 16 or 24 keys enabled (see appropriate column)
0.095
0.120
5.0
0.050
0.075
3.3
0.037
0.039
2000
1.8
0.100
0.130
5.0
0.053
0.080
3.3
0.038
0.040
1000
1.8
0.110
0.160
5.0
0.060
0.090
3.3
0.040
0.043
500
1.8
0.160
0.240
5.0
0.100
0.120
3.3
0.048
0.050
250
1.8
0.300
0.400
5.0
0.170
0.220
3.3
0.080
0.090
125
1.8
0.550
0.730
5.0
0.310
0.350
3.3
0.150
0.170
64
1.8
0.910
1.220
5.0
0.540
0.670
3.3
0.250
0.300
32
1.8
1.550
1.900
5.0
0.840
1.050
3.3
0.360
0.480
16
1.8
16 keys
24 keys
Idd Typical (mA)
Sleep
Setting (ms)
Voltage (V)
The formula to find the average current is:
Idd = (current sleeping x sleep period) + (current running x (burst spacing x number of keys enabled))
sleep period + (burst spacing x number of keys enabled)
Idd = (Idds x Tsleep) + (Iddr x (TBS x KE))
Note: there may be more than one inst ance of (TBS x KE)
Tsleep + (TBS x KE)
(see example below)
1 if more than one burst spacing is used then each must be
included in the calculation.
number of keys enabled1
=
KE
(Section 7.4)
burst spacing1 (ms)
=
TBS
(Section 7.3)
current when running (mA)
=
Iddr
(Table 6.2)
sleep period (ms)
=
Tsleep
(Section 7.3)
current when sleeping (mA)
=
Idds
average current (mA)
=
Idd
Where:
Example: Conditions: Vdd = 1.8V, 10 keys BL = 32, 14 keys BL = 16, Tsleep = 125ms
Idd = (0.003 x 125) + (1.02 x ((0.38 x 10) + (0.27 x 14))) = 0.06115mA = 61.15A
125 + ((0.38 x 10) + (0.27 x 14))
lQ
24
QT60240-ISG R8.06/0906
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