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參數(shù)資料
| 型號： | R1331NS12A |
| 廠商： | WESTCODE SEMICONDUCTORS LTD |
| 元件分類： | 晶閘管 |
| 英文描述： | 2687 A, 1200 V, SCR |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 685K |
| 代理商： | R1331NS12A |
WESTCODE
WESTCODE An IXYS Company
Distributed Gate Thyristor types R1331NS10# to R1331NS12#
Data Sheet. Type R1331NS10# to R1331NS12# Issue 1
Page 11 of 12
December, 2002
Figure 17 - Square wave energy per pulse
Figure 18 - Square wave energy per pulse
1.00E-02
1.00E-01
1.00E+00
1.00E+01
1.00E+02
1.00E+03
1.00E-05
1.00E-04
1.00E-03
1.00E-02
Pulse width (s)
Ener
gy
per
pulse
(J)
3kA
2kA
250A
1kA
500A
di/dt=100A/s
Tj=125°C
5kA
1.00E-02
1.00E-01
1.00E+00
1.00E+01
1.00E+02
1.00E+03
1.00E-05
1.00E-04
1.00E-03
1.00E-02
Pulse width (s)
Ener
gy
per
pulse
(J)
Tj=125°C
di/dt=500A/s
1kA
500A
250A
5kA
3kA
2kA
Figure 19 - Maximum surge and I
2t Ratings
1000
10000
100000
Total
peak
hal
fsi
ne
surge
current
-
I
TSM
(A)
1.00E+05
1.00E+06
1.00E+07
1.00E+08
M
a
x
imum
I
2 t
(A
2 s)
1
3 5
10
1
5
10
50 100
Duration of surge (ms)
Duration of surge (cycles @ 50Hz)
Tj (initial) = 125°C
I2t: VRRM
≤10V
I2t: 60% VRRM
ITSM: VRRM
≤10V
ITSM: 60% VRRM
Gate may temporarily lose control of conduction angle
R1331NS10#-12#
Issue 1
R1331NS10#-12#
Issue 1
R1331NS10#-12#
Issue 1
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