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參數(shù)資料
| 型號(hào)： | R3612 |
| 廠商： | Power Innovations International, Inc. |
| 英文描述： | PROGRAMMABLE OVERVOLTAGE PROTECTOR FOR ERICSSON COMPONENTS 3357/3 DCLIC |
| 中文描述： | 愛立信元件3357可編程過壓保護(hù)/ 3 DCLIC |
| 文件頁數(shù)： | 12/16頁 |
| 文件大?。?/td> | 222K |
| 代理商： | R3612 |
R3612
PROGRAMMABLE OVERVOLTAGE PROTECTOR
FOR ERICSSON COMPONENTS 3357/3 DCLIC
DECEMBER 1995 - REVISED SEPTEMBER 1997
12
P R O D U C T I N F O R M A T I O N
To avoid the problems of diode bridge implementation, the thyristor and series gate diode were duplicated
which allowed the bridge series thyristor diodes to be removed. This had the benefit that the protection
voltage was lowered by one diode forward voltage drop. The circuit performance of the IC was similar to the
discrete solution. Due to the integration, when the thyristor was in the on-state or the shunt diode in
conduction, about 10 mA of current was drawn from the gate supply, Figure 5. The direction of this current is
the same as that drawn by the SLIC, so it represented a small additional load on the SLIC supply and resulted
in some additional dissipation in the protector.
buffered gate protectors
The original IC design has been improved in two ways, Figure 5. Firstly, the lateral IC structure has been
changed to a vertical power device structure for increased surge current capability. Second, the series gate
diodes have been changed to transistors. The maximum current injected into the gate supply is then reduced
by the transistors gain factor (H
FE
). In most cases, just the lower peak gate current allows any previously used
SLIC supply rail shunt protection diode to be removed. By designing the protector such that I
GT
< I
GAF
, the net
gate current can be made to be a current drain, rather than a current injection, on the gate supply.
Fast rising surges will initially be clipped to the gate supply via the series combination of thyristor gate-
cathode diode and the transistor base-emitter diode. The overall wave forms will be similar to Figure 5 and the
supply decoupling capacitor, C1, should be dimensioned according to the text that accompanies Figure 5.
Although the SLIC supply is taken to a terminal that is internally connected to transistor bases, the terminal is
designated as the gate terminal, G.
R3612 parameters
The PBA 3357/3 DCLIC is characterised over a 0°C to 70°C temperature range. To ensure correct operation,
the R3612 protector is characterised on key paraters over the same temperature range. To ensure service
restoration after an over voltage, the R3612 holding current is 105 mA minimum, which matches the 105 mA
maximum line current of the PBA 3357/3. Typically the PBA3357/3 supply voltage will be -50 V ±6 V, but this
could rise to a maximum rated value of -70 V. To cover these conditions the R3612 is rated at -100 V with
electrical characteristics given at -48 V. The series overcurrent protector characteristic should be coordinated
with the a.c. ratings of the R3612. Overshoot voltages are measured under 0.5/700 μs conditions. This
Figure 7. IC VERSION OF Figure 4
D1
D2
D3
D4
C1
TH1
D6
SLIC
NEGATIVE
SLIC
SUPPLY
TH2
IC
K1
G
K2
A
WIRE A
WIRE B
R1
R2
V
GG
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