參數(shù)資料
型號(hào)： R5F21152DD
元件分類： 微控制器/微處理器
英文描述： 16-BIT, FLASH, MICROCONTROLLER, PDIP20
封裝： 0.300 INCH, 1.78 MM PITCH, PLASTIC, SDIP-20
文件頁(yè)數(shù)： 15/36頁(yè)
文件大?。?/td> 650K
代理商： R5F21152DD
Rev.0.10
Sep 06, 2004
Page 22 of 34
REJ03B0102-0010Z
Under development
R8C/14, R8C/15 Group
5. Electrical Characteristics
Preliminary specification
Specifications in this manual are tentative and subject to change.
NOTES:
1.
VCC=AVcc=2.7 to 5.5V at Topr = 0 to 60
°C, unless otherwise specified.
2.
Definition of program and erase
The program and erase endurance shows an erase endurance for every block.
If the program and erase endurance is “n” times (n = 100, 10000), “n” times erase can be performed for every block.
For example, if performing 1-byte write to the distinct addresses on Block A of 1Kbyte block 1,024 times and then erasing that
block, program and erase endurance is counted as one time.
However, do not perform multiple programs to the same address for one time ease.(disable overwriting).
3.
MInimum endurace to guarantee all electrical characteristics after program and erase.(1 to “Min.” value can be guaranateed).
4.
Standard of Block A and Block B when program and erase endurance exceeds 1,000 times. Byte program time to 1,000
times aer the same as that in program area.
5.
In the case of a system to execute multiple programs, perform one erase after programming as reducing effective reprogram
endurance not to leave blank area as possible such as programming write addresses in turn . If programming a set of 16
bytes, programming up to 128 sets and then erasing them one time can reduce effective reprogram endurance. Additionally,
averaging erase endurance for Block A and B can reduce effective reprogram endurance more. To leave erase endurance for
every block as information and determine the restricted endurance are recommended.
6.
If error occurs during block erase, attempt to execute the clear status register command, then the block erase command at
least three times until the erase error does not occur.
7.
Customers desiring Program/Erase failure rate information should contact their Renesas technical support representative.
8.
-40
°C for D version.
Table 5.4
Flash Memory (Program area) Electrical Characteristics
Symbol
Parameter
Conditions
Standard
Unit
Min.
Typ.
Max.
Program/Erase Endurance(2)
R8C/14 Group
times
R8C/15 Group
1,000(3)
times
Byte Program Time
VCC = 5.0 V at Topr = 25
°C
50
400
s
Block Erase Time
VCC = 5.0 V at Topr = 25
°C
0.4
9
s
td(SR-ES)
Time Delay from Suspend Request until
Erase Suspend
8ms
Program, Erase Voltage
2.7
5.5
V
Read Voltage
2.7
5.5
V
Program, Erase Temperature
0
60
°C
Data Hold Time
Topr = 55
°C20
year
Table 5.5
Flash Memory (Data area Block A, Block B) Electrical Characteristics
Symbol
Parameter
Conditions
Standard
Unit
Min.
Typ.
Max.
Program/Erase Endurance(2)
times
Byte Program Time
(Program/Erase Endurance
≤ 1,000 Times)
VCC = 5.0 V at Topr = 25
°C
50
400
s
Byte Program Time
(Program/Erase Endurance
> 1,000 Times)
VCC = 5.0 V at Topr = 25
°C
65
400
s
Block Erase Time
(Program/Erase Endurance
≤ 1,000 Times)
VCC = 5.0 V at Topr = 25
°C
0.2
9
s
Block Erase Time
(Program/Erase Endurance
> 1,000 Times)
VCC = 5.0 V at Topr = 25
°C
0.3
9
s
td(SR-ES)
Time Delay from Suspend Request until
Erase Suspend
8ms
Program, Erase Voltage
2.7
5.5
V
Read Voltage
2.7
5.5
V
Program, Erase Temperature
-20(8)
85
°C
Data Hold Time
Topr = 55
°C20
year
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