參數(shù)資料
型號(hào)： R5F212E2DFP
元件分類： 微控制器/微處理器
英文描述： 8-BIT, FLASH, 20 MHz, MICROCONTROLLER, PQFP32
封裝： 7 X 7 MM, 0.80 MM PITCH, PLASTIC, LQFP-32
文件頁(yè)數(shù)： 19/41頁(yè)
文件大?。?/td> 332K
代理商： R5F212E2DFP
R8C/2E Group, R8C/2F Group
5. Electrical Characteristics
Rev.1.00
Dec 14, 2007
Page 26 of 39
REJ03B0222-0100
NOTE:
1.
VCC = 2.7 to 5.5 V at Topr =
20 to 85°C (N version) / 40 to 85°C (D version), unless otherwise specified.
NOTES:
1.
VCC = 2.7 to 5.5 V at Topr = 0 to 60
°C, unless otherwise specified.
2.
Definition of programming/erasure endurance
The programming and erasure endurance is defined on a per-block basis.
If the programming and erasure endurance is n (n = 100 or 10,000), each block can be erased n times. For example, if 1,024
1-byte writes are performed to block A, a 1 Kbyte block, and then the block is erased, the programming/erasure endurance
still stands at one.
However, the same address must not be programmed more than once per erase operation (overwriting prohibited).
3.
Endurance to guarantee all electrical characteristics after program and erase. (1 to Min. value can be guaranteed).
4.
In a system that executes multiple programming operations, the actual erasure count can be reduced by writing to sequential
addresses in turn so that as much of the block as possible is used up before performing an erase operation. For example,
when programming groups of 16 bytes, the effective number of rewrites can be minimized by programming up to 128 groups
before erasing them all in one operation. It is also advisable to retain data on the erase count of each block and limit the
number of erase operations to a certain number.
5.
If an error occurs during block erase, attempt to execute the clear status register command, then execute the block erase
command at least three times until the erase error does not occur.
6.
Customers desiring program/erase failure rate information should contact their Renesas technical support representative.
7.
The data hold time includes time that the power supply is off or the clock is not supplied.
Table 5.5
Comparator Characteristics(1)
Symbol
Parameter
Conditions
Standard
Unit
Min.
Typ.
Max.
Vcref
Comparator reference voltage
0
VCC
1.2
V
Vcin
Comparator input voltage
0.3
VCC+0.3
V
Vofs
Input offset voltage
±100
mV
Tcrsp
Response time
200
ns
Table 5.6
Flash Memory (Program ROM) Electrical Characteristics
Symbol
Parameter
Conditions
Standard
Unit
Min.
Typ.
Max.
Program/erase endurance(2)
R8C/2E Group
times
R8C/2F Group
1,000(3)
times
Byte program time
50
400
s
Block erase time
0.4
9
s
td(SR-SUS)
Time delay from suspend request until
suspend
97+CPU clock
× 6 cycles
s
Interval from erase start/restart until
following suspend request
650
s
Interval from program start/restart until
following suspend request
0
ns
Time from suspend until program/erase
restart
3+CPU clock
× 4 cycles
s
Program, erase voltage
2.7
5.5
V
Read voltage
2.7
5.5
V
Program, erase temperature
0
60
°C
Data hold time(7)
Ambient temperature = 55
°C20
year
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
R5F212E2DFP#U0 制造商:Renesas Electronics Corporation 功能描述:MCU 2.7/5V 8KB -40 85C 32-LQFP - Trays 制造商:Renesas Electronics Corporation 功能描述:IC MCU 16BIT 8KB FLASH 32LQFP
R5F212E2DFP#V0 功能描述:MCU FLASH 8K ROM 32-LQFP RoHS:是 類別:集成電路 (IC) >> 嵌入式 - 微控制器， 系列:R8C/2x/2E 標(biāo)準(zhǔn)包裝:250 系列:80C 核心處理器:8051 芯體尺寸:8-位 速度:16MHz 連通性:EBI/EMI，I²C，UART/USART 外圍設(shè)備:POR，PWM，WDT 輸入/輸出數(shù):40 程序存儲(chǔ)器容量:- 程序存儲(chǔ)器類型:ROMless EEPROM 大小:- RAM 容量:256 x 8 電壓 - 電源 (Vcc/Vdd):4.5 V ~ 5.5 V 數(shù)據(jù)轉(zhuǎn)換器:A/D 8x10b 振蕩器型:內(nèi)部 工作溫度:-40°C ~ 85°C 封裝/外殼:68-LCC（J 形引線） 包裝:帶卷 (TR)
R5F212E2DXXXFP 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:RENESAS MCU R8C FAMILY / R8C/2x SERIES
R5F212E2NFP 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:RENESAS MCU R8C FAMILY / R8C/2x SERIES
R5F212E2NFP#U0 制造商:Renesas Electronics Corporation 功能描述:MCU 2.7/5V 8KB 32-LQFP - Trays 制造商:Renesas Electronics Corporation 功能描述:MCU 16-bit M16C CISC 8KB Flash 3.3V/5V 32-Pin LQFP 制造商:Renesas Electronics Corporation 功能描述:IC MCU 16BIT 8KB FLASH 32LQFP
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