參數(shù)資料
型號： R5F5630ADDFB#V0
廠商： Renesas Electronics America
文件頁數(shù)： 62/165頁
文件大小： 0K
描述： MCU RX630 768KB FLASH 144-LQFP
產(chǎn)品培訓(xùn)模塊： RX Compare Match Timer
RX DMAC
標(biāo)準(zhǔn)包裝： 1
系列： RX600
核心處理器： RX
芯體尺寸： 32-位
速度： 100MHz
連通性： CAN，EBI/EMI，I²C，LIN，SCI，SPI，USB
外圍設(shè)備： DMA，LVD，POR，PWM，WDT
輸入/輸出數(shù)： 117
程序存儲器容量： 768KB（768K x 8）
程序存儲器類型： 閃存
RAM 容量： 96K x 8
電壓 - 電源 (Vcc/Vdd)： 2.7 V ~ 3.6 V
數(shù)據(jù)轉(zhuǎn)換器： A/D 8x10b，21x12b，D/A 2x10b
振蕩器型： 內(nèi)部
工作溫度： -40°C ~ 85°C
封裝/外殼： 144-LQFP
包裝： 托盤
R01DS0060EJ0100 Rev.1.00
Page 154 of 168
Sep 13, 2011
RX630 Group
5. Electrical Characteristics
5.12
ROM (Flash Memory for Code Storage) Characteristics
Note 1. Definition of reprogram/erase cycle:
The reprogram/erase cycle is the number of erasing for each block. When the reprogram/erase cycle is n times (n = 1000),
erasing can be performed n times for each block. For instance, when 256-byte programming is performed 16 times for different
addresses in 4-Kbyte block and then the entire block is erased, the reprogram/erase cycle is counted as one. However,
programming the same address for several times as one erasing is not enabled (overwriting is prohibited).
Note 2. This indicates the minimum number that guarantees the characteristics after reprogramming. (The guaranteed value is in the
range from one to the minimum number.)
Note 3. This indicates the characteristic when reprogram is performed within the specification range including the minimum number.
Table 5.29
ROM (Flash Memory for Code Storage) Characteristics
Conditions: VCC = AVCC0 = VCC_USB = 2.7 to 3.6 V, VREFH/VREFH0 = 2.7 V to AVCC0
VSS = AVSS0 = VREFL/VREFL0 = VSS_USB = 0 V
Temperature range for the programming/erasure operation: Ta = Topr
Item
Symbol
FCLK = 4 MHz
20 MHz
≤ FCLK ≤ 50 MHz
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
Programming time
NPEC 100 hours
128 bytes
tP128
—
2.8
28
—
1
10
ms
4 Kbytes
tP4K
—
63
140
—
23
50
ms
16 Kbytes
tP16K
—
252
560
—
90
200
ms
Programming time
NPEC > 100 hours
128 bytes
tP128
—
3.4
33.6
—
1.2
12
ms
4 Kbytes
tP4K
—
75.6
168
—
27.6
60
ms
16 Kbytes
tP16K
—
302.4
672
—
108
240
ms
Erasure time
NPEC 100 hours
4 Kbytes
tE4K
—
50
120
—
25
60
ms
16 Kbytes
tE16K
—
200
480
—
100
240
ms
Erasure time
NPEC > 100 hours
4 Kbytes
tE4K
—
60
144
—
30
72
ms
16 Kbytes
tE16K
—
240
576
—
120
288
ms
Reprogram/erase cycle*1
NPEC
1000*2
—
——
Times
Suspend delay time during programming
tSPD
—
400
—
120
μs
First suspend delay time during erasing
(in suspend priority mode)
tSESD1
—
300
—
120
μs
Second suspend delay time during erasing
(in suspend priority mode)
tSESD2
——
1.7
—
—1.7
ms
Suspend delay time during erasing
(in erasure priority mode)
tSEED
——
1.7
—
—1.7
ms
Data hold time*3
tDRP
10
—
10
—
Year
FCU reset time
tFCUR
35
—
35
—
μs
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