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參數(shù)資料
| 型號： | R759 |
| 廠商： | Hamamatsu Photonics |
| 英文描述： | PHOTOMULTIPLIER TUBE |
| 中文描述： | 光電倍增管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 21K |
| 代理商： | R759 |
GENERAL
Parameter
Description/Value
160 to 320
240
200
Cs-Te
10
Synthetic Silica
Linear focused
10
1.0
2.0
13-pin glass base
E678-13A (supplied)
Unit
nm
nm
nm
—
mm dia.
—
—
—
pF
pF
—
—
Spectral Response
Wavelength of Maximum Response
Wavelength of Maximum Quantum Efficiency
Photocathode
Window Material
Dynode
Direct Interelectrode
Capacitances
Base
Suitable Socket
Material
Minimum Useful Size
Structure
Number of Stages
Anode to Last Dynode
Anode to All Other Electrodes
PHOTOMULTIPLIER TUBE
R759
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter
Between Anode and Cathode
Between Anode and Last Dynode
Supply Voltage: 1000Vdc, K: Cathode, Dy: Dynode, P: Anode
For UV Range, 13mm (1/2 Inch) Diameter,
Head-on, 10-Stage, Cs-Te Photocathode
CHARACTERISTICS (at 25
°
C)
VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE
Electrodes
Ratio
1
1
1
Parameter
Min.
—
Unit
mA/W
A/W
—
nA
ns
ns
Value
1250
250
0.01
-80 to +50
Unit
Vdc
Vdc
mA
°
C
Supply Voltage
Average Anode Current
Ambient Temperature
Cathode Radiant Sensitivity at 254nm
Anode Radiant Sensitivity at 254nm
Gain
Anode Dark Current (after 30min. storage in darkness)
Anode Pulse Rise Time
Electron Transit Time
Time Response
K
Dy1
Dy2
Dy3
Dy4
1
Dy5
1
Dy6
1
Dy7
1
Dy8
1
Dy9
1
1
1
Dy10
P
4.0
×
10
3
—
—
—
—
28
1.4
×
10
4
5.0
×
10
5
0.3
2.5
24
—
—
—
1
—
—
Typ.
Max.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein.
'
1999 Hamamatsu Photonics K.K.
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
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