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參數資料
| 型號： | RD33FG02 |
| 廠商： | DYNEX SEMICONDUCTOR LTD |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Rectifier Diode Target Information |
| 中文描述： | 3997 A, 200 V, SILICON, RECTIFIER DIODE |
| 封裝： | G, 2 PIN |
| 文件頁數： | 3/7頁 |
| 文件大小： | 96K |
| 代理商： | RD33FG02 |
RD33FG
3/7
www.dynexsemi.com
Units
mA
A
μ
C
V
m
Parameter
Thermal resistance - junction to case
Thermal resistance - case to heatsink
Virtual junction temperature
Storage temperature range
Clamping force
Parameter
Surge (non-repetitive) forward current
I
2
t for fusing
Surge (non-repetitive) forward current
I
2
t for fusing
Test Conditions
10ms half sine, T
case
= 175C
V
R
= 50% V
RRM
- 1/4 sine
10ms half sine, T
case
= 175C
V
R
= 0
Symbol
I
FSM
I
2
t
I
FSM
I
2
t
SURGE RATINGS
Units
kA
A
2
s
kA
A
2
s
Max.
37.4
7.0 x 10
6
46.75
10.93 x 10
6
Test Conditions
At V
RRM
, T
case
= 200C
I
F
= 1000A, dI
RR
/dt = 3A/
μ
s,
T
case
= 200C, V
R
= 100V
At T
vj
= 200C
At T
vj
= 200C
Parameter
Peak reverse current
Peak reverse recovery current
Total stored charge
Threshold voltage
Slope resistance
CHARACTERISTICS
Symbol
I
RM
I
rr
Q
S
V
TO
r
T
Max.
50
30
160
0.6
0.0872
Min.
-
-
-
-
-
Test Conditions
Double side cooled
DC
Single side cooled
Anode DC
Cathode DC
Clamping force 12.0kN
Double side
(with mounting compound)
Single side
Forward (conducting)
Reverse (blocking)
THERMAL AND MECHANICAL RATINGS
Symbol
R
th(j-c)
R
th(c-h)
T
vj
T
stg
F
m
Units
CW
CW
CW
CW
CW
C
C
C
kN
Max.
0.032
0.064
0.064
0.008
0.016
225
200
200
13.2
Min.
-
-
-
-
-
-
-
–55
10.8
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| RD33FG03 | Rectifier Diode Target Information |
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相關代理商/技術參數 |
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| RD33FG05 | 制造商:DYNEX 制造商全稱:Dynex Semiconductor 功能描述:Rectifier Diode Target Information |
| RD33FG06 | 制造商:Dynex Semiconductor 功能描述:STANDARD RECOVERY DIODE AND RECTIFIER |
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