參數(shù)資料
型號: RD65FV02
廠商: DYNEX SEMICONDUCTOR LTD
元件分類: 參考電壓二極管
英文描述: Rectifier Diode Target Information
中文描述: 11745 A, 200 V, SILICON, RECTIFIER DIODE
封裝: V, 2 PIN
文件頁數(shù): 3/7頁
文件大?。?/td> 98K
代理商: RD65FV02
RD65FV
3/7
www.dynexsemi.com
Units
mA
A
μ
C
V
m
Parameter
Thermal resistance - junction to case
Thermal resistance - case to heatsink
Virtual junction temperature
Storage temperature range
Clamping force
Parameter
Surge (non-repetitive) forward current
I
2
t for fusing
Surge (non-repetitive) forward current
I
2
t for fusing
Test Conditions
10ms half sine, T
case
= 175C
V
R
= 50% V
RRM
- 1/4 sine
10ms half sine, T
case
= 175C
V
R
= 0
Symbol
I
FSM
I
2
t
I
FSM
I
2
t
SURGE RATINGS
Units
kA
A
2
s
kA
A
2
s
Max.
130
84.5 x 10
6
162
132 x 10
6
Test Conditions
At V
RRM
, T
case
= 200C
I
F
= 2000A, dI
RR
/dt = 3A/
μ
s,
T
case
= 200C, V
R
= 100V
At T
vj
= 200C
At T
vj
= 200C
Parameter
Peak reverse current
Peak reverse recovery current
Total stored charge
Threshold voltage
Slope resistance
CHARACTERISTICS
Symbol
I
RM
I
rr
Q
S
V
TO
r
T
Max.
150
230
39
0.6
0.0225
Min.
-
-
-
-
-
Test Conditions
Double side cooled
DC
Single side cooled
Anode DC
Cathode DC
Clamping force 43.0kN
Double side
(with mounting compound)
Single side
Forward (conducting)
Reverse (blocking)
THERMAL AND MECHANICAL RATINGS
Symbol
R
th(j-c)
R
th(c-h)
T
vj
T
stg
F
m
Units
CW
CW
CW
CW
CW
C
C
C
kN
Max.
0.0075
0.015
0.015
0.002
0.004
225
200
200
47.3
Min.
-
-
-
-
-
-
-
–55
38.7
相關(guān)PDF資料
PDF描述
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