參數(shù)資料
型號： RDS035L03
英文描述： TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 3.5A I(D) | SO
中文描述： 晶體管| MOSFET的|配對| N溝道| 30V的五（巴西）直| 3.5AI（四）|蘇
文件頁數(shù)： 3/4頁
文件大小： 42K
代理商： RDS035L03
RDS035L03
Transistors
z
Electrical characteristic curves
10
1
0.1
0.01
Fig.1 Reverse Drein Current
vs. Source - Drain Voltage
R
D
(
0.0
0.5
1.0
1.5
SOURCE - DRAIN VOLTAGE : V
GS
(V)
Ta=125
C
75
C
25
C
25
C
V
DS
=
0V
Pulsed
0.1
1
10
0.1
0.01
1
10
Pulsed
V
DS
=
10V
Ta=
25
C
25
C
75
C
125
C
0.01
DRAIN CURRENT : I
D
(A)
Fig.2 Forward Transfer Admittance
vs. Drain Current
F
f
(
Pulsed
V
GS
=
4.5V
1
10
0.1
0.1
0.01
0.001
1
DRAIN CURRENT : I
D
(A)
S
O
D
(
)
Fig.3 Static Drain-Source
On-State Resistance
vs. Drain Current ( )
Ta=125
C
75
C
25
C
25
C
Pulsed
V
GS
=
10V
1
100
10
0.1
0.1
0.01
0.001
1
Ta=125
C
75
C
25
C
25
C
DRAIN CURRENT : I
D
(A)
Fig.4 Static Drain-Source
On-State Resistance
vs. Drain Current ( )
S
O
D
(
)
0
50
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.1
0
25
50
75
100 125 150
S
O
D
(
)
CHANNEL TEMPERATURE : Tch
(
C)
Fig.5 Static Drain-Source
On-State Resistance vs.
Channel Temperature
25
V
GS
=10V
Pulsed
Fig.6 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
0.6
0.5
0.3
0.4
0.1
0.2
0
0
10
5
15
20
GATE-SOURCE VOLTAGE : V
GS
(V)
O
D
(
)
S
I
D
=3.5A
Ta=25
C
Pulsed
150
50
25
50
4
3
2
1
0
25
0
75
100 125
G
G
(
CHANNEL TEMPERATURE : T
ch
(
C)
Fig.7 Gate Threshold Voltage
vs. Channel Temperature
V
DS
=
10V
I
D
=
1mA
Pulsed
1000
100
10
0.1
1
10
100
Ta=25
C
f=1=0V
V
GS
Fig.8 Typical Capacitance
vs. Drain-Source Voltage
C
(
DRAIN-SOURCE VOLTAGE : V
DS
(V)
C
iss
C
oss
C
rss
0
1
3
2
4
5
6
7
24V
15V
24V
15V
10V
10V
V
DS
V
GS
Ta=25
C
I
D
=3.5A
Pulsed
0
10
20
30
40
0
2
8
10
12
14
6
4
TOTAL GATE CHARGE : Qg (
nC)
D
D
(
G
G
(
Fig.9 Dynamic Input Characteristics
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參數(shù)描述
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