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參數(shù)資料
| 型號： | REF5050IDRG4 |
| 英文描述： | Low-Noise, Very Low Drift, Precision VOLTAGE REFERENCE |
| 中文描述： | 低噪聲，低漂移，高精度電壓基準 |
| 文件頁數(shù)： | 13/18頁 |
| 文件大?。?/td> | 469K |
| 代理商： | REF5050IDRG4 |
Orderable Device
Status
(1)
Package
Type
SOIC
Package
Drawing
D
Pins Package
Qty
75
Eco Plan
(2)
Lead/Ball Finish
MSL Peak Temp
(3)
REF5040AIDG4
ACTIVE
8
Green (RoHS &
no Sb/Br)
2500 Green (RoHS &
no Sb/Br)
2500 Green (RoHS &
no Sb/Br)
75
Green (RoHS &
no Sb/Br)
75
Green (RoHS &
no Sb/Br)
2500 Green (RoHS &
no Sb/Br)
2500 Green (RoHS &
no Sb/Br)
75
Green (RoHS &
no Sb/Br)
75
Green (RoHS &
no Sb/Br)
2500 Green (RoHS &
no Sb/Br)
2500 Green (RoHS &
no Sb/Br)
75
Green (RoHS &
no Sb/Br)
75
Green (RoHS &
no Sb/Br)
2500 Green (RoHS &
no Sb/Br)
2500 Green (RoHS &
no Sb/Br)
75
Green (RoHS &
no Sb/Br)
75
Green (RoHS &
no Sb/Br)
2500 Green (RoHS &
no Sb/Br)
2500 Green (RoHS &
no Sb/Br)
75
Green (RoHS &
no Sb/Br)
75
Green (RoHS &
no Sb/Br)
2500 Green (RoHS &
no Sb/Br)
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
REF5040AIDR
ACTIVE
SOIC
D
8
Call TI
Level-2-260C-1 YEAR
REF5040AIDRG4
ACTIVE
SOIC
D
8
Call TI
Level-2-260C-1 YEAR
REF5040ID
ACTIVE
SOIC
D
8
CU NIPDAU
Level-2-260C-1 YEAR
REF5040IDG4
ACTIVE
SOIC
D
8
CU NIPDAU
Level-2-260C-1 YEAR
REF5040IDR
ACTIVE
SOIC
D
8
CU NIPDAU
Level-2-260C-1 YEAR
REF5040IDRG4
ACTIVE
SOIC
D
8
CU NIPDAU
Level-2-260C-1 YEAR
REF5045AID
ACTIVE
SOIC
D
8
CU NIPDAU
Level-2-260C-1 YEAR
REF5045AIDG4
ACTIVE
SOIC
D
8
CU NIPDAU
Level-2-260C-1 YEAR
REF5045AIDR
ACTIVE
SOIC
D
8
Call TI
Level-2-260C-1 YEAR
REF5045AIDRG4
ACTIVE
SOIC
D
8
Call TI
Level-2-260C-1 YEAR
REF5045ID
ACTIVE
SOIC
D
8
CU NIPDAU
Level-2-260C-1 YEAR
REF5045IDG4
ACTIVE
SOIC
D
8
CU NIPDAU
Level-2-260C-1 YEAR
REF5045IDR
ACTIVE
SOIC
D
8
CU NIPDAU
Level-2-260C-1 YEAR
REF5045IDRG4
ACTIVE
SOIC
D
8
CU NIPDAU
Level-2-260C-1 YEAR
REF5050AID
ACTIVE
SOIC
D
8
CU NIPDAU
Level-2-260C-1 YEAR
REF5050AIDG4
ACTIVE
SOIC
D
8
CU NIPDAU
Level-2-260C-1 YEAR
REF5050AIDR
ACTIVE
SOIC
D
8
Call TI
Level-2-260C-1 YEAR
REF5050AIDRG4
ACTIVE
SOIC
D
8
Call TI
Level-2-260C-1 YEAR
REF5050ID
ACTIVE
SOIC
D
8
CU NIPDAU
Level-2-260C-1 YEAR
REF5050IDG4
ACTIVE
SOIC
D
8
CU NIPDAU
Level-2-260C-1 YEAR
REF5050IDR
ACTIVE
SOIC
D
8
CU NIPDAU
Level-2-260C-1 YEAR
REF5050IDRG4
ACTIVE
SOIC
D
8
CU NIPDAU
Level-2-260C-1 YEAR
(1)
The marketing status values are defined as follows:
ACTIVE:
Product device recommended for new designs.
LIFEBUY:
TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND:
Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW:
Device has been announced but is not in production. Samples may or may not be available.
PACKAGE OPTION ADDENDUM
www.ti.com
12-Oct-2007
Addendum-Page 2
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PDF描述 |
|---|---|
| REF5030AID | Low-Noise, Very Low Drift, Precision VOLTAGE REFERENCE |
| REF5030AIDG4 | Low-Noise, Very Low Drift, Precision VOLTAGE REFERENCE |
| REF5030AIDR | Low-Noise, Very Low Drift, Precision VOLTAGE REFERENCE |
| REF5030AIDRG4 | Low-Noise, Very Low Drift, Precision VOLTAGE REFERENCE |
| REF5030I | Low-Noise, Very Low Drift, Precision VOLTAGE REFERENCE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| REF5050MDREP | 功能描述:基準電壓& 基準電流 EP Lo-Noise,Very Lo Drift,Prec Vltg Ref RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Voltage References 拓撲結(jié)構(gòu):Shunt References 參考類型:Programmable 輸出電壓:1.24 V to 18 V 初始準確度:0.25 % 平均溫度系數(shù)（典型值）:100 PPM / C 串聯(lián) VREF - 輸入電壓（最大值）: 串聯(lián) VREF - 輸入電壓（最小值）: 分流電流（最大值）:60 mA 最大工作溫度:+ 125 C 封裝 / 箱體:SOT-23-3L 封裝:Reel |
| REF5050-Q1 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:LOW NOISE, VERY LOW DRIFT,PRECISION VOLTAGE REFERENCE |
| REF50D | 制造商:PLESSE 功能描述: |
| REF50Z | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:5V MICROPOWER PRECISION REFERENCE |
| REF5925(P2) | 制造商:3M Electronic Products Division 功能描述:3M MASK FILTER PARTICLES P2 |
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