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參數(shù)資料
| 型號： | RF110 |
| 英文描述： | 2400 MHz Power Amplifier |
| 中文描述： | 2400兆赫功率放大器 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 78K |
| 代理商： | RF110 |
RF110
2400 MHz Power Amplifier
2
Conexant
Conexant Proprietary
100647A
1/19/00
Technical Description
The RF110 is a three stage, class AB RF power amplifier. A
class AB power amplifier allows a wide range of output powers
without excessive idle power dissipation.
Figure 3 shows a typical application circuit for the RF110.
Recommendations on Layout and Implementation_______
Matching.
An input matching network and an output matching
network are required for maximum power gain.
The output matching network must provide the optimum load
resistance to the RF110 outputs as well as convert the
differential signals to a single-ended signal into a 50
load.
The output matching network should present a differential
impedance of approximately 59-j10
to the output of the
RF110, with a 180° phase difference between the two branches.
The values of the matching network components depend on
layout, Printed Wire Board (PWB) material and dimensions.
Bypassing.
All V
CC
pins should have proper bypassing. The
decoupling capacitors should be placed very close to the pins.
A bypass capacitor of 8.2 pF and a decoupling capacitor of 1 nF
are recommended. Due to layout variations, the optimum value
of the capacitor may vary.
General Grounding Requirements.
All ground pins should
have minimum trace inductance to ground. If a ground plane
cannot be provided right at the pins, the vias to ground plane
should be placed as close to the pins as possible. There should
be one via for each ground pin, unless otherwise specified. If the
ground plane is at the bottom layer, two vias per pin in parallel
may be required.
Pins 14-15 and 16-17 are recommended to be isolated from the
top layer ground.
Pins 2, 9, 12, and 19 are recommended to be tied together on
the top layer isolated from the top layer ground.
NC pins are not used in the circuit and should be connected to
ground as shown in Figure 3.
ESD Sensitivity______________________________________
The RF110 is a static-sensitive electronic device. Do not operate
or store near strong electrostatic fields. Take proper
Electrostatic Discharge (ESD) precautions.
10 nH
RF110
1
2
3
4
5
6
7
8
9
10
10
8.2 pF
20
19
18
17
16
15
14
13
12
11
RFIN2
RFIN1
GND2
VCC3
ENABLE
VCC2
VCC1
GND1
RFOUT1
RFOUT2
GND10
GND9
GND8
GND7
GND6
GND5
GND4
GND3
NC1
NC2
10
8.2 pF
8.2 pF
1000 pF
RFOUT
8.2 pF
1000 pF
1.2 pF
8.2 pF
1000 pF
VBAT
0.1 μF
47 μF
5.3 V
+
LPF
Antenna
matching
T/R
switch
90° *
84
40° *
84
52.6° *
97
29° *
84
Matching
network
10 nH
10 nH
OPEN
SHUNT
52° *
79
* Center frequency = 2442 MHz
4° *
84
RF109
OUT
OUT
VBAT
TxEnable
Figure 3. RF110 Typical Application Circuit
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