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參數(shù)資料
| 型號： | RF1K4909396 |
| 英文描述： | TRANSISTOR | MOSFET | MATCHED PAIR | P-CHANNEL | 12V V(BR)DSS | 2.5A I(D) | SO |
| 中文描述： | 晶體管| MOSFET的|配對| P通道| 12V的五（巴西）直| 2.5AI（四）|蘇 |
| 文件頁數(shù)： | 5/8頁 |
| 文件大小： | 262K |
| 代理商： | RF1K4909396 |
2002 Fairchild Semiconductor Corporation
RF1K49093 Rev. B
FIGURE 12. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 13. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 14. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE:
FIGURE 15. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Refer to Fairchild Application Notes AN7254 and AN7260.
Test Circuits and Waveforms
FIGURE 16. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 17. UNCLAMPED ENERGY WAVEFORMS
Typical Performance Curves
(Continued)
-80
-40
0
40
80
120
160
0.0
0.5
1.0
1.5
2.0
N
T
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= -250
μ
A
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
B
I
D
= -250
μ
A
1200
900
300
00
-2
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-4
-6
-8
-10
C
600
C
ISS
C
OSS
C
RSS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
= C
DS
+ C
GD
-12
-9
-6
-3
0
20
(
)
)
---------------------
t, TIME (
μ
s)
80
(
)
)
---------------------
-5.00
-3.75
-2.50
-1.25
0.00
V
DD
= BV
DSS
V
DD
= BV
DSS
V
D
,
V
G
,
R
L
= 3.84
I
G(REF)
= -0.5mA
V
GS
= -5V
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
t
P
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
GS
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
RF1K49093
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