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參數(shù)資料
| 型號(hào)： | RF1K4915696 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 6.3A I(D) | SO |
| 中文描述： | 晶體管| MOSFET的| N溝道| 30V的五（巴西）直| 6.3AI（四）|蘇 |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大?。?/td> | 262K |
| 代理商： | RF1K4915696 |
2002 Fairchild Semiconductor Corporation
RF1K49093 Rev. B
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. SWITCHING TIME AS A FUNCTION OF
GATE RESISTANCE
FIGURE 11. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
1
10
100
-10
0.1
-20
-1
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
If R = 0
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
0
-5
-10
-15
0
-1
-2
-3
-4
-5
-20
-25
V
GS
= -4V
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= -10V
V
GS
= -4.5V
V
GS
= -5V
V
GS
= -3V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
A
= 25
C
25
o
C
0.0
-3.0
-4.5
-6.0
-7.5
-1.5
0
-5
-10
-15
-20
-25
150
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= -6V
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
-55
o
C
100
200
300
400
500
0
-2.5
-3.5
-4.0
-4.5
-5.0
V
GS
, GATE TO SOURCE VOLTAGE (V)
r
D
,
)
I
D
= -2.5A
I
D
= -0.5A
-3.0
I
D
= -6.0A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
I
D
= -1.5A
V
DD
= -10V
40
20
30
40
50
0
120
100
80
60
20
0
10
R
GS
, GATE TO SOURCE RESISTANCE (
)
S
V
DD
= -6V, I
D
= -2.5A, R
L
= 2.40
t
r
t
f
t
D(OFF)
t
D(ON)
0
0.5
1.0
1.5
2.0
-80
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= -5V, I
D
= -2.5A
O
RF1K49093
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