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參數(shù)資料
| 型號： | RF1K4922496 |
| 英文描述： | TRANSISTOR | MOSFET | PAIR | COMPLEMENTARY | 30V V(BR)DSS | 3.5A I(D) | SO |
| 中文描述： | 晶體管| MOSFET的|一對|互補| 30V的五（巴西）直| 3.5AI（四）|蘇 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 262K |
| 代理商： | RF1K4922496 |
2002 Fairchild Semiconductor Corporation
RF1K49093 Rev. B
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs
AMBIENT TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
AMBIENT TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
T
A
, AMBIENT TEMPERATURE (
o
C)
P
0.0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
-2.0
-1.0
-0.5
0
25
50
75
100
125
150
-1.5
-3.0
-2.5
I
D
,
T
A
, AMBIENT TEMPERATURE (
o
C)
t, RECTANGULAR PULSE DURATION (s)
10
-3
10
-1
10
0
10
1
10
2
0.01
10
0.1
1
10
-2
10
3
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JA
x R
θ
JA
+ T
A
P
DM
t
1
t
2
Z
θ
J
,
T
SINGLE PULSE
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-1
-10
-100
-0.01
-1
-100
-10
-0.1
-0.1
I
D
,
DC
5ms
10ms
100ms
1s
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
T
J
= MAX RATED, T
A
= 25
o
C
V
DSS
MAX = -12V
t, PULSE WIDTH (s)
-200
-10
-1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
V
GS
= -5V
-100
I
D
,
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
V
GS
= -10V
I
=
I
25
150 - T
A
125
FOR TEMPERATURES
ABOVE 25
C DERATE PEAK
CURRENT AS FOLLOWS:
T
A
= 25
o
C
RF1K49093
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