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4-151
4
G
A
Produc t Desc ription
Ordering Information
Typic al Applic ations
Features
Func tional Block Diagram
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching Applied
Si BJT
GaAs HBT
Si Bi-CMOS
SiGe HBT
GaAs MESFET
Si CMOS
1
2
3
5
4
RF OUT
GND
GND
GND
RF IN
RF2336
GENER AL PUR POS E AMPLIFIER
Broadband, Low Noise Gain Blocks
IF or RF Buffer Amplifiers
Driver Stage for Power Amplifiers
Final PA for Low Power Applications
Broadband Test Equipment
The RF2336 is a general purpose, low-cost RF amplifier
IC. The device is manufactured on an advanced Gallium
Arsenide Heterojunction Bipolar Transistor (HBT) pro-
cess, and has been designed for use as an easily-cas-
cadable 50
gain block. Applications include IF and RF
amplification in wireless voice and data communication
products operating in frequency bands up to 3000MHz.
The device is self-contained with 50
input and output
impedances and requires only two external DC biasing
elements to operate as specified. The RF2336 is avail-
able in a very small industry-standard SOT23 5-lead sur-
face mount package, enabling compact designs which
conserve board space.
DC to 3000MHz Operation
Internally matched Input and Output
20dB Small Signal Gain
3.8dB Noise Figure
10mW Linear Output Power
Single Positive Power Supply
RF2336
RF2336 PCBA
General Purpose Amplifier
Fully Assembled Evaluation Board
4
Rev A3 001201
1
1.60
+ 0.01
0.400
2.80
+ 0.20
2.90
+ 0.10
0.45
+ 0.10
3° MAX
0° MIN
0.127
0.15
0.05
1.44
1.04
Dimensions in mm.
0.950
Package S tyle: S OT 5 Lead