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參數(shù)資料
| 型號： | RF2629 |
| 廠商： | RF MICRO DEVICES INC |
| 元件分類： | 衰減器 |
| 英文描述： | 3V CDMA/FM TRANSMIT AGC AMPLIFIER |
| 中文描述： | 12 MHz - 175 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封裝： | PLASTIC, MSOP-8 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 103K |
| 代理商： | RF2629 |
10-40
RF2629
Rev B4 010720
10
I
Absolute Maximum Ratings
Parameter
Supply Voltage
Control Voltage
Input Power Levels
Operating Ambient Temperature
Storage Temperature
Rating
-0.5 to +7.0
-0.5 to +5.0
+10
-40 to +85
-40 to +150
Unit
V
DC
V
dBm
°C
°C
Parameter
Specification
Typ.
Unit
Condition
Min.
Max.
Overall
T=25°C,130MHz,V
CC
=3.0V,Pin=-40dBm,
Z
S
=1k
, Z
L
=1k
, 1k
External Output Ter-
minating Resistor (Effective Z
L
=500
) (See
Application Example)
Frequency Range
Maximum Gain
Minimum Gain
Gain Slope
Gain Control Voltage Range
Gain Control Input Impedance
Noise Figure
Input IP3
12 to 175
+38
-48
57
0 to 2.4
30
10.5
-25
MHz
dB
dB
dB/V
V
DC
k
dB
dBm
+35
V
GC
=2.3V
V
GC
=0.3V
Measured in 0.5V increments
-45
13
At maximum gain and 130MHz
At +10dB gain and referenced to 1k
,
Pin=-45dBm per tone
At +35dB gain and referenced to 1k
,
Pin=-45dBm per tone
Differential
Spurious<-70dBm
-26
-28
-26
dBm
Input Impedance
Stability (Max VSWR)
Power Supply
Voltage
Current Consumption
Current Consumption
1
k
10:1
2.7 to 3.3
23
22
V
25
24
mA
mA
Maximum gain, V
CC
=3.0V
Minimum gain, V
CC
=3.0V
Caution!
ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
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