參數(shù)資料
型號： RJN1164
廠商： Electronic Theatre Controls, Inc.
英文描述： N-Channel Junction FET
中文描述： N溝道結(jié)場效應(yīng)管
文件頁數(shù)： 1/4頁
文件大?。?/td> 175K
代理商： RJN1164
RFsemi Technologies, Inc.
Rev. 6
N-Channel Junction FET
RJN1164
Electret Capacitor Microphone Applications
Features
z
Specially suited for use in audio and
telephone electret capacitor microphones
z
Excellent voltage gain
z
Very low noise
z
High ESD voltage
z
Ultra-small size package
Applications
z
Cellular phones
z
Portable audio
z
PDAs
z
MP3 players
Absolute Maximum Ratings at Ta = 25
o
C
Parameter
Package Type : SOT-400
[unit:mm]
[TOP VIEW] [SIDE VIEW]
1. Drain 2. Source 3. Gate
Symbol
Ratings
Unit
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Electrical Characteristics at Ta = 25
o
C
V
GDO
I
G
I
D
P
D
Tj
Tstg
-20
10
10
100
150
V
mA
mA
mW
o
C
o
C
-55 to +150
Ratings
Typ
-0.6
Parameter
Symbol
Conditions
Min
-20
-0.2
70*
0.4
Max
Unit
Gate-to-Drain Breakdown Voltage
Cutoff Voltage
Zero-Gate Voltage Drain Current
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
* The RJN1164 is classified by I
DSS
as follows
Classification
I
DSS
(
μ
A)
V
(BR)GDO
V
GS(off)
I
DSS
|
yfs
|
Ciss
Crss
I
G
= -100
μ
A
V
DS
= 5V, I
D
= 1
μ
A
V
DS
= 5V, V
GS
= 0
V
DS
= 5V, V
GS
= 0, f = 1kHz
V
DS
= 5V, V
GS
= 0, f = 1MHz
V
DS
= 5V, V
GS
= 0, f = 1MHz
V
V
μ
A
mS
pF
pF
-1.5
430*
1.2
3.5
0.8
A1
A2
B
C
D
70~120
100~170
150~270
210~350
320~430
0.31
±
0.03
0.21
±
0.03
1.60
±
0.05
0.5
±
0.05
0
±
0
1
±
0
2
3
1
0.21
±
0.03
0.5
±
0.05
0~0.02
MAX 0.42
0.15
±
0.03
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