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參數(shù)資料
| 型號： | RK4936 |
| 英文描述： | TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 6A I(D) | SO |
| 中文描述： | 晶體管| MOSFET的|配對| N溝道| 30V的五（巴西）直| 6A條（?。﹟蘇 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 41K |
| 代理商： | RK4936 |
RK4936
Transistors
z
Electrical characteristic curves
10
1
0.1
0.01
Fig.1 Reverse Drein Current
vs. Source-Drain Voltage
R
D
(
0.0
0.5
1.0
1.5
SOURCE - DRAIN VOLTAGE : V
GS
(V)
Ta=125
°
C
75
°
C
25
°
C
25
°
C
V
DS
=
0V
Pulsed
0.1
1
100
10
0.1
0.01
1
10
Pulsed
V
DS
=
10V
Ta=
25
°
C
25
°
C
75
°
C
125
°
C
0.01
DRAIN CURRENT : I
D
(A)
Fig.2 Forward Transfer Admittance
vs. Drain Current
F
f
(
Pulsed
V
GS
=
10V
1
10
0.1
0.1
0.01
0.001
1
DRAIN CURRENT : I
D
(A)
S
O
D
(
)
Fig.3 Static Drain-Source
On-State Resistance
vs. Drain Current (
Ι
)
Ta=125
°
C
75
°
C
25
°
C
25
°
C
Pulsed
V
GS
=
4V
1
10
0.1
0.1
0.01
0.001
1
Ta=125
°
C
75
°
C
25
°
C
25
°
C
DRAIN CURRENT : I
D
(A)
Fig.4 Static Drain-Source
On-State Resistance
vs. Drain Current (
ΙΙ
)
S
O
D
(
)
0.000
0.005
0.010
0.015
0.020
0.025
0.030
0.035
0.040
0.045
0.050
0
25
50
75
100 125 150
S
O
D
(
)
CHANNEL TEMPERATURE : Tch
(
°
C)
Fig.5 Static Drain-Source
On-State Resistance vs.
Channel Temperature
50
25
V
GS
=10V
I
D
=6A
Pulsed
Fig.6 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
0.100
0.060
0.080
0.020
0.040
0.000
0
2
4
6
8
10 12
14 16
18 20
GATE-SOURCE VOLTAGE : V
GS
(V)
O
D
(
)
S
Ta=25
°
C
Pulsed
I
D
=6A
3A
25
50
4.000
3.000
2.000
1.000
0.000
25
0
50
75
100 125 150
G
G
(
CHANNEL TEMPERATURE : T
ch
(
°
C)
Fig.7 Gate Threshold Voltage
vs. Channel Temperature
V
DS
=
10V
I
D
=
1mA
Pulsed
10000
1000
100
10
0.1
1
10
100
f=1MHz
°
C
V
GS
=0V
Pulsed
Fig.8 Typical Capacitance
vs. Drain-Source Voltage
C
(
DRAIN-SOURCE VOLTAGE : V
DS
(V)
C
iss
C
oss
C
rss
0
8
16
24
32
Ta=25
°
C
V
DD
=24V
I
D
=6A
Pulsed
V
DS
V
GS
0
5
10
15
20
25
30
0
5
10
15
TOTAL GATE CHARGE : Qg (
nC)
D
D
(
G
G
(
Fig.9 Dynamic Input Characteristics
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