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參數(shù)資料
| 型號： | RMDA1840 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 18-40 GHz Broad Band Driver Amplifier MMIC |
| 中文描述： | 18-40 GHz的寬帶驅(qū)動放大器單片 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 389K |
| 代理商： | RMDA1840 |
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised January 15, 2001
Page 1
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
Description
4 mil substrate
Small-signal gain 22 dB (typ.)
Pout 1 dB comp 23 dBm (typ.)
Chip size 4.67 mm x 2.00 mm
Features
The RMDA1840 is a 4-stage GaAs MMIC amplifier designed as a 18 to 40 GHz broad band amplifier for use in point
to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. The
RMDA1840 utilizes Raytheon’s 0.25μm power PHEMT process and is sufficiently versatile to serve in a variety of
applications, such as a driver amplifier or a frequency multiplier.
RMDA1840
18-40 GHz Broad Band Driver Amplifier
MMIC
Electrical
Characteristics
(At 25°C),
50
system,
Vd = +5 V,
Quiescent
Current
Idq = 400 mA
Parameter
Frequency Range
Gate Supply Voltage (Vg)
1
Gain Small Signal at
Pin = -5 dBm
Gain Variation vs
Frequency
Gain at 1dB Compression
Power Output at 1 dB
Compression
Min
18
Typ
Max Unit
40
GHz
V
-0.2
20
22
dB
+/-2.5
21
dB
dB
23
dBm
Parameter
Power Output Saturated:
Pin = +3 dBm
Power Added Efficiency
(PAE): at P1dB
Input Return Loss
(Pin = -5 dBm)
Output Return Loss
(Pin = -5 dBm)
Min
Typ
Max Unit
21
24
dBm
15
%
8
dB
10
dB
Notes:
1.
Typical range of gate voltage is -1.0 to 0 V to set Idq of 400 mA.
Absolute
Maximum
Ratings
Parameter
Positive DC voltage (+5 V Typical)
Negative DC voltage
Simultaneous (Vd - Vg)
Positive DC Current
RF Input Power (from 50
source)
Operating Baseplate Temperature
Storage Temperature Range
Thermal Resistance
(Channel to Backside)
Symbol
Vd
Vg
Vdg
I
D
P
IN
T
C
T
stg
R
JC
Value
+6
-2
+8
442
+15
-30 to +85
-55 to +125
53
Units
Volts
Volts
Volts
mA
dBm
°C
°C
°C/W
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