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參數(shù)資料
| 型號(hào)： | RMLA3565-58 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Wideband Low Noise MMIC Amplifier |
| 中文描述： | 寬帶單片低噪聲放大器 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 349K |
| 代理商： | RMLA3565-58 |
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 28, 2002
Page 2
www.raytheonrf.com
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
CAUTION: THIS IS AN ESD SENSITIVE DEVICE
The following briefly describes a procedure for evaluating the high efficiency PHEMT amplifier packaged in a
surface mount package. It may be noted that the chip is a fully monolithic single ended two stage amplifier for 3.5
to 6.5 GHz applications.
Test Fixture
Figure 1 shows the outline and pin-out descriptions for the packaged device. Figure 2 shows the functional block
diagram of the packaged product. A typical test fixture schematic showing external bias components is shown in
figure 3. Figure 4 shows typical layout of an evaluation board corresponding to the schematic diagram. A typical
performance obtained from the test fixture is shown in figure 5. The following should be noted:
(1) Package pin designations are as shown in figure 1.
(2) Vd is the Drain Voltage (positive) applied at the pins of the package
(3) Vdd is the positive supply voltage at the evaluation board terminal
Application
Information
RMLA3565-58
Wideband Low Noise MMIC Amplifier
Figure 2
Functional Block
Diagram
RF OUT
Pin# 2
N/C
1,4,6,9,10,11
(Recommend grounding
externally to PC board)
Vd
Pin# 12
Ground
Pin# 5
Figure 1
Package Outline and
Pin Designations
Dimensions in inches
Pin#
1
2
3
4
5
6
7
8
9
10
11
12
13
Description
N/C
RF Out
GND
N/C
GND
N/C
GND
RF In
N/C
N/C
N/C
Vd
GND
(Package Base)
PLASTIC LID
SIDE SECTION
0.075 MAX.
0.008
0.015
0.282
1
2
3
5
4
6
7
8
9
10
12 11
0.041
1
2
3
0.015
0.200 SQ.
5 4
6
TOP VIEW
BOTTOM VIEW
7
9
8
10
12
11
0.030
Ground
Pins# 3,5,7,13
0.020
RF IN
Pin# 8
Ground
Pin# 7
0.011
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