- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373294 > RMPA1901-53 MICROWAVE/MILLIMETER WAVE AMPLIFIER|SINGLE|GAAS|QFP|12PIN|PLASTIC PDF資料下載
參數(shù)資料
| 型號： | RMPA1901-53 |
| 英文描述： | MICROWAVE/MILLIMETER WAVE AMPLIFIER|SINGLE|GAAS|QFP|12PIN|PLASTIC |
| 中文描述： | 微波/毫米波放大器|單|公認審計| QFP封裝| 12PIN |塑料 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 327K |
| 代理商： | RMPA1901-53 |
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised May 14, 1999
Page 2
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
The following describes a procedure for evaluating the RMPA1901-53, a monolithic high efficiency power amplifier,
in a surface mount package, designed for use in Personal Communication Systems (PCS) utilizing Code Division
Multiple Access (CDMA). Figure 2 shows the functional block diagram of the packaged product. Figure 1 shows
the package outline and the pin designations. It should be noted that RMPA1901-53 requires external passive
components for DC bias and RF output matching circuits. A recommended schematic of circuits is shown in Figure
3. The gate biases for the three stages of the amplifier are set by simple resistive voltage dividers. Potentiometers
R1 to R3 are used to set the required quiescent currents of the amplifier stages. Figure 4 shows a typical layout of
an evaluation board, corresponding to the schematic circuits of figure 3. The following should be noted:
Application
Information
(1)
Pin designations are as shown in figure 2.
(2)
Vg1, Vg2 and Vg3 are the Gate Voltages (negative)
applied at the pins of the package
(3)
Vgg1, Vgg2 and Vgg3 are the negative supply
voltages at the evaluation board terminals
(4)
Vd1, Vd2 and Vd3 are the Drain Voltages (positive)
applied at the pins of the package
(5)
Vdd1, Vdd2 and Vdd3 are the positive supply
voltages at the evaluation board terminals
Figure 1
Package Outline and
Pin Designations
NC
RF Out & Vd3
RF Out & Vd3
Vd1
GND
Vg1
RF IN
GND
Vg2
Vd2
GND
Vg3
GND (METAL BASE)
1
2
3
4
5
6
7
8
9
10
11
12
13
Description
Pin #
Dimensions in inches
Figure 2
Functional Block
Diagram of
Packaged Product
(RMPA1901-53)
RF IN
Pin# 7
RF OUT & Vd3
Pin# 2, 3
Vg2
Pin# 9
Vg3
Pin# 12
Vd2
Pin# 10
NC
Pin# 1
NC
Pin# 1
GND
Pin# 5, 8, 11, 13
10
11
1
2
3
4 5 6
7
8
9
12
BOTTOM VIEW
TOP VIEW
10
11
0.030
A
0.015
1
2
3
4
5
6
7
8
9
12
0.200 SQ.
RAY
RMPA
1901-53
0.041
13
PLASTIC LID
SIDE SECTION
0.069 MAX.
0.010
0.230
0.246
0.282
Vd1
Pin# 4
Vg1
Pin# 6
RMPA1901-53
PCS CDMA GaAs MMIC
Power Amplifier
相關PDF資料 |
PDF描述 |
|---|---|
| RMT020L | Logic IC |
| RMT025L | Logic IC |
| RMT050L | Logic IC |
| RMT075L | Logic IC |
| RMT100L | Logic IC |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| RMPA1951-102 | 制造商:RAYTHEON 制造商全稱:RAYTHEON 功能描述:3V PCS CDMA Power Amplifier Module |
| RMPA1959 | 功能描述:射頻放大器 3.4V PCS CDMA PA Module RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| RMPA1959-108 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| RMPA1963 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:US-PCS CDMA, CDMA2000-1X and WCDMA Power Amplifier Module |
| RMPA1965 | 功能描述:射頻放大器 US-PCS CDMA2000-1X Pwr Edge Amp Mod RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復。