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參數(shù)資料
| 型號： | RN49A1 |
| 英文描述： | TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | TSOP |
| 中文描述： | 晶體管| 50V五（巴西）總裁| 100mA的一（c）|的TSOP |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 209K |
| 代理商： | RN49A1 |
RN49A1
2000-04-12 1/5
TOSHIBA Transistor
R N 4 9 A 1
Silicon PNP Epitaxial Type (PCT process) Silicon NPN Epitaxial Type (PCT process)
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications.
Including two devices in US6 (ultra super mini type with 6 leads)
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Equivalent Circuit and Bias Resistor Values
Q1
Q2
Q1: RN2105F
Q2: RN1108F
Marking
Circuit
(top view)
Equivalent
R1: 22 k
R2: 47 k
E
B
R1
C
R
TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in
general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of
the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure
of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please
ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications.
Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook.
The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or
others.
The information contained herein is subject to change without notice.
961001EAA1
6
1 5
4
1
2
3
5
4
1
2
3
6
5
Q1
Q2
E
B
R1
C
R
R1: 2.2 k
R2: 47 k
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