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RF Monolithics, Inc.
RO2150-102799
Electrical Characteristics
Characteristic
Absolute Frequency
Tolerance from 304.0 MHz
Sym
f
C
f
C
IL
Q
U
Q
L
T
O
f
O
FTC
|fA|
Notes
Minimum
Typical
304.0
Maximum
Units
MHz
kHz
Center Frequency at +25 °C
2, 3, 4, 5
±50
2.0
Insertion Loss
Quality Factor
2, 5, 6
1.5
dB
Unloaded Q
50
Loaded Q
Turnover Temperature
Turnover Frequency
Frequency Temperature Coefficient
Absolute Value during the First Year
5, 6, 7
14,350
2,000
25
f
C
0.037
≤±10
Temperature Stability
6, 7, 8
10
40
°C
kHz
ppm/°C
2
ppm/yr
M
μH
Frequency Aging
DC Insulation Resistance between Any Two Terminals
RF Equivalent RLC Model
1
5
1.0
Motional Resistance
Motional Inductance
Motional Capacitance
Pin 1 to Pin 2 Static Capacitance
Transducer Static Capacitance
R
M
L
M
C
M
C
O
C
P
L
TEST
5, 6, 7, 9
16.1
26
120.9559
2.266061
1.26
1.01
217.82
fF
pF
pF
5, 6, 9
5, 6, 7, 9
2, 7
1.3
Test Fixture Shunt Inductance
Lid Symbolization
nH
RFM RO2150
TO39-3 Case
Ideal for 304.0 MHz Transmitters
Very Low Series Resistance
Quartz Stability
Rugged, Hermetic, Low-Profile TO39 Case
The RO2150 is a true one-port, surface-acoustic-wave (SAW) resonator in a low-profile TO39 case. It pro-
vides reliable, fundamental-mode, quartz frequency stabilization of fixed-frequency oscillators operating at
304.0 MHz. The RO2150 is designed for wireless remote-control transmitters operating in Japan and Aus-
tralia.
Absolute Maximum Ratings
Rating
Value
+5
±30
-40 to +85
Units
dBm
VDC
°C
CW RF Power Dissipation
DC Voltage Between Terminals (Observe ESD Precautions)
Case Temperature
304.0 MHz
SAW
Resonator
RO2150
CAUTION: Electrostatic Sensitive Device. Observe precautions for handling.
Notes:
Lifetime (10 year) frequency aging.
The center frequency, f
C
, is measured at the minimum insertion loss
point, IL
MIN
, with the resonator in the 50
test system (VSWR
≤
1.2:1). The shunt inductance, L
TEST
, is tuned for parallel resonance
with C
O
at f
C
.
One or more of the following United States patents apply:
4,454,488 and 4,616,197.
Typically, equipment utilizing this device requires emissions testing
and government approval, which is the responsibility of the equip-
ment manufacturer.
Unless noted otherwise, case temperature T
C
= +25°C±2°C.
The design, manufacturing process, and specifications of this
device are subject to change without notice.
Derived mathematically from one or more of the following directly
1.
2.
3.
4.
5.
6.
7.
measured parameters: f
C
, IL, 3 dB bandwidth, f
C
versus T
C
, and
C
O
.
Turnover temperature, T
O
, is the temperature of maximum (or turn-
over) frequency, f
O
. The nominal frequency at any case tempera-
ture, T
C
, may be calculated from: f = f
O
[1 - FTC (T
O
-T
C
)
2
].
This equivalent RLC model approximates resonator performance
near the resonant frequency and is provided for reference only. The
capacitance C
O
is the static (nonmotional) capacitance between
Pin 1 and Pin 2 measured at low frequency (10 MHz) with a capaci-
tance meter. The measurement includes parasitic capacitance with
a floating case. Case parasitic capacitance is approximately
0.25pF. Transducer parallel capacitance can be calculated as C
P
≈
C
O
- 0.25pF.
8.
9.