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參數(shù)資料
| 型號(hào)： | RP-21005D2-330Y |
| 廠商： | DATA DEVICE CORP |
| 元件分類： | 模擬信號(hào)調(diào)理 |
| 英文描述： | SPECIALTY ANALOG CIRCUIT, DMA10 |
| 封裝： | DIP-10 |
| 文件頁(yè)數(shù)： | 9/12頁(yè) |
| 文件大?。?/td> | 86K |
| 代理商： | RP-21005D2-330Y |
6
drawing current and STATUS 2 indicates the Power MOS-
FET switch is on.
7) Tripped condition. STATUS 1 indicates the load is not
drawing current and STATUS 2 indicates the Power MOS-
FET switch is off. The SSPC can be turned back on by
cycling the input control to a logic low and then back to a
logic high. If the excessive load has not been removed, the
SSPC will trip again.
8) No load current. STATUS 1 indicates the load is not draw-
ing current; STATUS 2 indicates the Power MOSFET switch
is on.
LOADS
The RP-21000 series can be used with any type of load: any
combination of inductive, resistive, and capacitive. In addition,
they can be used with dc motors and lamps.
Inductive loads require protecting the SSPC against voltage tran-
sients. See the section on Precautions above.
Capacitive loads require comparing the load in-rush current to
the trip curve of FIGURE 2. The inrush current must be below
the minimum trip curve to avoid tripping on the inrush current.
The inrush current can be calculated from the voltage rise time
by using i=C*dv/dt. Use the minimum rise time for calculation.
The minimum rise time is 25% of the maximum rise time speci-
fied in FIGURE 3.
Capacitive loads can present a discharge problem. The SSPCs
use Power MOSFETs as the switching element. The MOSFETs
contain a parasitic diode which will be forward biased if the
SSPC power output terminal is more positive than the power
input terminal. If the 28 Vdc source is turned off while a charge
is held on the capacitive load, this diode will turn on and dis-
charge the load through the generator. The SSPC can carry a
reverse current equal to its forward current rating, however, the
dissipation with reverse current is up to seven times the forward
current dissipation for the same current. The user must ensure
that the maximum case temperature is not exceeded. The trip
circuit will activate for reverse currents, however, the parasitic
diode will continue to conduct. When the power input terminals
are brought more positive than the power output terminals the
power controller will be off.
Incandescent lamps must be treated like capacitive loads for
inrush current. Since they do not store charge, they do not pre-
sent a discharge problem.
DC motors also must be treated like capacitive loads for in-rush
current. If they continue rotating when power is removed, reverse
current is a possibility due to back EMF. Voltage transients must
also be considered when using dc motors as loads on SSPCs.
HEATSINKING
The RP-21000 series are designed so that the junction temper-
ature can never exceed its maximum rating if the case tempera-
ture is held to 125°C or less. Heatsinking is recommended to
keep the case temperature to 125°C when operating at high
ambient temperatures. The SSPCs may be operated at room
temperature without a heat sink. The maximum ambient tem-
perature, TA, for operation without a heat sink is 125 - Pd x θCA
(where Pd is the power dissipation from TABLE 4 and θCA is the
thermal resistance from case-to-ambient from TABLE 3).
The same expression is used for finding the maximum ambient
temperature with a heat sink except
θ
CA is now the sum of the
thermal resistance from case-to-sink and from sink-to-ambient.
ADVANTAGES OF THE RP-21000 SERIES
NO OFFSET VOLTAGE
The Power MOSFET used in the DDC SSPCs have no inherent
voltage offset. The voltage drop across the Power MOSFET is
solely dependent on the current flowing through the device and
its "ON" resistance.
Bipolar transistors, on the other hand, have an inherent dc offset
voltage to which is added a voltage drop proportional to the
devices' "ON" resistance and the current flowing through it. It is
this inherent offset voltage that is missing from the power MOS-
FET. The Power MOSFET, in many applications, leads to a lower
voltage drop and power dissipation as an SSPC switch. In addi-
tion, the Power MOSFET’s driver logic requirements are much
simpler, especially when multiple MOSFETs are used as in the
SSPC product.
NO SECONDARY BREAKDOWN AND PARALLELING
SSPCS
A bipolar transistor has a set of current-voltage limits that form
an envelope that cannot be exceeded; this is known as the safe
operating area of the device. If this envelope is exceeded, local
hot spots will occur. These hot spots conduct currents more
readily then adjacent cool areas and tend to become hotter. This
thermal runaway leads to the ultimate destruction of the device;
called secondary breakdown.
The Power MOSFETs have the opposite characteristics from
that of thermal runaway in bipolar devices. A local hot-spot will
steer current away from itself as its resistance in this area goes
up. This results in even current sharing throughout the entire
device, thereby eliminating hot-spots. The inherent advantage of
not having secondary breakdown is that the entire MOSFET has
to exceed its temperature limitations before damage results. This
characteristic makes the Power MOSFET more rugged when
used for power switching then bipolar devices.
Due to the current sharing aspects of the power MOSFET, they
can be placed in parallel and share the load equally. DDC has a
standard 28 Vdc 80 AMP power module which uses this tech-
nique.
ISOLATION OF CONTROL AND STATUS
The SSPC was designed with isolation between the load power
and the five volt control logic input and the status outputs. This is
necessary to prevent noise caused by transients or power spikes
on the power line from adversely affecting the operation of the
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