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| 型號： | RX1214B300Y |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN Microwave power transistor(NPN 微波功率晶體管) |
| 中文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | METAL CERAMIC, SOT-439A, 3 PIN |
| 文件頁數(shù)： | 4/12頁 |
| 文件大?。?/td> | 74K |
| 代理商： | RX1214B300Y |
1997 Feb 19
4
Philips Semiconductors
Product specification
NPN microwave power transistor
RX1214B300Y
THERMAL CHARACTERISTICS
T
j
= 100
°
C unless otherwise specified
Notes
1.
2.
See “Mounting recommendations in the General part of handbook SC19a”
Equivalent thermal impedance under nominal pulse microwave operating conditions.
CHARACTERISTICS
T
mb
= 25
°
C unless otherwise specified
APPLICATION INFORMATION
Microwave performance at T
mb
≤
25
°
C in a common base class C wideband amplifier.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
R
th j-mb
R
th mb-h
Z
th j-h
thermal resistance from junction to mounting-base
thermal resistance from mounting base to heatsink
thermal impedance from junction to heatsink
0.8
0.2
0.22
K/W
K/W
K/W
note 1
t
p
= 150
μ
s;
δ
= 5 %;
notes 1 and 2
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
(BR)CBO
V
(BR)CES
V
(BR)EBO
I
CBO
I
EBO
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector cut-off current
emitter cut-off current
I
C
= 140 mA; I
E
= 0
I
C
= 140 mA; R
BE
= 0
I
C
= 0; I
E
= 20 mA
V
CB
= 50 V; I
E
= 0
V
EB
= 1.5 V; I
C
= 0
65
60
3
14
1.4
V
V
V
mA
mA
MODE OF OPERATION
f
(GHz)
V
CC
(V)
P
L
(W)
≥
250
typ. 320
typ. 300
G
P
(dB)
≥
7
typ. 8
typ. 7.5
η
C
(%)
≥
35
typ. 40
typ. 35
Z
i
; Z
L
(
)
see Fig 6
Pulsed
t
p
= 150
μ
s;
δ
= 5 %
t
p
= 300
μ
s;
δ
= 10 %
1.2 to 1.4
50
1.2 to 1.4
50
see Fig 6
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| RX1214B300Y TRAY | 功能描述:兩極晶體管 - BJT BULKTR TNS-MICP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| RX1214B300Y,114 | 功能描述:兩極晶體管 - BJT BULKTR TNS-MICP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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| RX1214B80W | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN microwave power transistors |
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