參數(shù)資料
型號: S-80736AN-D0-T1
元件分類: 電源管理
英文描述: 1-CHANNEL POWER SUPPLY SUPPORT CKT, PSSO3
封裝: SOT-89, 3 PIN
文件頁數(shù): 16/40頁
文件大?。?/td> 454K
代理商: S-80736AN-D0-T1
HIGH-PRECISION VOLTAGE DETECTOR
S-807 Series
22
Seiko Instruments Inc.
46. S-80753AN (Detection voltage : 5.172 to 5.428 V)
(Unless otherwise specified : Ta=25
°C)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Test
circuit
Detection voltage
-VDET
5.172
5.300
5.428
V
1
Hysteresis width
VHYS
-VDET
×0.02
-VDET
×0.05
-VDET
×0.08
V
1
Current consumption
ISS
VDD = 6.0 V
1.0
3.0
A
2
Operating voltage
VDD
1.0
15.0
V
1
Output current
IOUT
Nch
VDS = 0.5 V
VDD = 1.2 V
0.23
0.50
mA
3
VDD = 2.4 V
1.60
3.70
VDD = 3.6 V
3.18
7.00
Pch
(CMOS
output)
VDS = 0.5 V
VDD = 6.0 V
0.46
0.75
4
Temperature
characteristic of -
VDET
Ta=-30
°C to 80°C
±0.66
mV/
°C
47. S-80755AL-EK-X (Detection voltage : 5.368 to 5.632 V)
(Unless otherwise specified : Ta=25
°C)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Test
circuit
Detection voltage
-VDET
5.368
5.500
5.632
V
1
Hysteresis width
VHYS
-VDET
×0.02
-VDET
×0.05
-VDET
×0.08
V
1
Current consumption
ISS
VDD = 6.0 V
1.0
3.0
A
2
Operating voltage
VDD
1.0
15.0
V
1
Output current
IOUT
Nch
VDS = 0.5 V
VDD = 1.2 V
0.23
0.50
mA
3
VDD = 2.4 V
1.60
3.70
VDD = 3.6 V
3.18
7.00
Pch
(CMOS
output)
VDS = 0.5 V
VDD = 6.0 V
0.46
0.75
4
Temperature
characteristic of -
VDET
Ta=-30
°C to 80°C
±0.69
mV/
°C
48. S-80761SL-ER-X (Detection voltage : 5.953 to 6.247 V)
(Unless otherwise specified : Ta=25
°C)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Test
circuit
Detection voltage
-VDET
5.953
6.100
6.247
V
1
Hysteresis width
VHYS
-VDET
×0.02
-VDET
×0.05
-VDET
×0.08
V
1
Current consumption
ISS
VDD = 7.5 V
1.9
3.6
A
2
Operating voltage
VDD
1.0
15.0
V
1
Output current
IOUT
Nch
VDS = 0.5 V
VDD = 1.2 V
0.23
0.50
mA
3
VDD = 2.4 V
1.60
3.70
VDD = 3.6 V
3.18
7.00
VDD = 4.8 V
4.13
8.56
Pch
(CMOS
output)
VDS = 0.5 V
VDD = 8.4 V
0.59
0.96
4
Temperature
characteristic of -
VDET
Ta=-30
°C to 80°C
±0.78
mV/
°C
-V
DET
Ta
-V
DET
Ta
-V
DET
Ta
DISCONTINUED
PRODUCT
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