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  • 參數(shù)資料
    型號: S-817B56AY-X
    廠商: Seiko Instruments Inc.
    英文描述: SUPER-SMALL PACKAGE CMOS VOLTAGE REGULATOR
    中文描述: 超小型封裝CMOS電壓穩(wěn)壓器
    文件頁數(shù): 10/28頁
    文件大小: 412K
    代理商: S-817B56AY-X
    ULTRA COMPACT CMOS VOLTAGE REGULATOR
    S-817 Series
    Rev.2.3
    10
    Seiko Instruments Inc.
    Applied Circuits
    1. Output Current Boosting Circuit
    As shown in Figure 10, the output current
    can be boosted by externally attaching a
    PNP transistor. The base current of the
    PNP transistor is controlled so that output
    voltage V
    OUT
    goes the voltage specified in
    the S-817 when base-emitter voltage VBE
    necessary to turn on the PNP transistor is
    obtained between input voltage V
    IN
    and S-
    817 power source pin VIN.
    The following are tips and hints for selecting
    and ensuring optimum use of external parts:
    PNP transistor Tr1:
    1. Set h
    FE
    to approx. 100 to 400.
    2. Confirm that no problem occurs due to power dissipation under normal operation conditions.
    Resistor R1:
    Generally set R1 to 1 k
    ÷
    V
    OUT
    (S) (the voltage specified in the S-817 Series) or more.
    Output capacitor CL:
    Output capacitor CL is effective in minimizing output fluctuation at powering on or due to power or load
    fluctuation, but oscillation might occur. Always connect resistor R2 in series to output capacitor CL.
    Resistor R2: Set R2 to 2
    x V
    OUT
    (S) or more.
    DO NOT attach a capacitor between the S-817 power source VIN and GND pins or between base and
    emitter of the PNP transistor to avoid oscillation.
    To improve transient response characteristics of the output current boosting circuit shown in Figure 10,
    check that no problem occurs due to output fluctuation at powering on or due to power or load fluctuation
    under normal operating conditions.
    Pay attention to the short current limit circuit incorporated into the S-817 Series because it does not
    function as a shortcircuiting protection circuit for this boosting circuit.
    The following graphs show the examples of input-output voltage characteristics (Ta = 25
    °
    C, typ.) in the output
    current boosting circuit:
    (1) S-817A11ANB/S-817B11AMC
    (2)S-817A50ANB/S-817B50AMC
    Tr1: 2SA1213Y, R1: 1k
    , CL: 10μF, R2: 2
    Tr1: 2SA1213Y, R1: 200
    , CL: 10μF, R2: 10
    R2
    R1
    Tr1
    GND
    VOUT
    VIN
    VSS
    V
    IN
    V
    OUT
    C
    L
    Figure 10 Output Current Boosting
    S-817
    Series
    C
    IN
    4.60
    4.70
    4.80
    4.90
    5.00
    5.10
    5.20
    5.2
    5.3
    5.4
    5.5
    V
    IN
    (V)
    5.6
    5.7
    5.8
    5.9
    V
    O
    100mA
    50mA
    10mA
    5mA
    800mA
    600mA
    400mA
    200mA
    0.60
    0.70
    0.80
    0.90
    1.00
    1.10
    1.20
    1.4
    1.5
    1.6
    1.7
    1.8
    1.9
    2
    2.1
    2.2
    2.3
    2.4
    V
    IN
    (V)
    V
    O
    800mA
    600mA
    400mA
    200mA
    10mA
    1mA
    50mA
    100mA
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