參數(shù)資料
型號(hào)： S-8520E47MC-BKG-T2
元件分類(lèi)： 穩(wěn)壓器
英文描述： 0.05 A SWITCHING CONTROLLER, 375 kHz SWITCHING FREQ-MAX, PDSO5
封裝： SOT-23, 5 PIN
文件頁(yè)數(shù)： 11/43頁(yè)
文件大?。?/td> 499K
代理商： S-8520E47MC-BKG-T2
PWM CONTROL, PWM/PFM SWITCHING CONTROL STEP-DOWN SWITCHING REGULATOR
Rev.7.4_20
S-8520/8521 Series
Seiko Instruments Inc.
19
5-2. Bipolar PNP type
Figure 10
shows a sample circuit diagram using Toshiba Corporation 2SA1213-Y for the bipolar
transistor (PNP). The driving capacity for increasing the output current by means of a bipolar
transistor is determined by the hFE value and the Rb value of that bipolar transistor.
VIN
EXT
VIN
Rb
Cb
Toshiba Corporation
2SA1213-Y
Figure 10
The Rb-value is given by the following equation:
EXTL
b
IN
b
I
4
.
0
I
7
.
0
V
R
=
Find the necessary base current Ib using the hFE value of bipolar transistor by the equation,
FE
PK
b
h
I
=
,
and select a smaller Rb value.
A small Rb value will certainly contribute to increasing the output current, but it will also adversely
affect the efficiency. Moreover, in practice, a current may flow as the pulses or a voltage drop may
take place due to the wiring resistance or some other reason. Determine an optimum value through
experimentation.
In addition, if speed-up capacitor (Cb) is inserted in parallel with resistance Rb, as shown in Figure 10,
the switching loss will be reduced, leading to a higher efficiency.
Select a Cb value by using the following equation as a guide:
7
.
0
f
R
2
1
C
osc
b
×
π
≤
However, the practically reasonable Cb value differs depending upon the characteristics of the bipolar
transistor. Optimize the Cb value based on the experiment result.
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