參數(shù)資料
型號： S1227-33BR
廠商： Hamamatsu Photonics
英文描述： Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity
中文描述： 硅光電二極管對紫外可見，精密光度法;抑制紅外靈敏度
文件頁數(shù)： 3/4頁
文件大?。?/td> 153K
代理商： S1227-33BR
Si photodiode
S1227 series
KSPDA0094EA
KSPDA0095EA
KSPDA0096EA
KSPDA0097EA
S1227-33BQ
S1227-33BR
I
Dimensional outlines (unit: mm)
S1227-16BQ
S1227-16BR
8.5 ± 0.2
2
0
1
6
ANODE MARK
0.5
LEAD
12.2
13.5 ± 0.13
15 ± 0.15
0
ACTIVE AREA
HOLE
(2
×
) 0.8
PHOTOSENSITIVE
SURFACE
8.5 ± 0.2
2
1
6
ANODE MARK
13.5 ± 0.13
15 ± 0.15
0
ACTIVE AREA
HOLE
(2
×
) 0.8
0.5
LEAD
PHOTOSENSITIVE
SURFACE
Resin coating may extend a
maximum of 0.1 mm above the
upper surface of the package.
7.6 ± 0.1
6
ACTIVE AREA
0
2
1
0
0
4.5 ± 0.2
ANODE
TERMINAL MARK
0.5
LEAD
PHOTOSENSITIVE
SURFACE
6.6 ± 0.3
5
7.6 ± 0.1
6
ACTIVE AREA
2
1
0
0
6.6 ± 0.3
4.5 ± 0.2
5
ANODE
TERMINAL MARK
0.5
LEAD
PHOTOSENSITIVE
SURFACE
Resin coating may extend a
maximum of 0.1 mm above the
upper surface of the package.
3
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參數(shù)描述
S1227-66BQ 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity
S1227-66BR 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity
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