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參數(shù)資料
| 型號(hào)： | S1230AB-70 |
| 英文描述： | 256k Nonvolatile SRAM |
| 中文描述： | 256k非易失SRAM |
| 文件頁(yè)數(shù)： | 3/12頁(yè) |
| 文件大小： | 213K |
| 代理商： | S1230AB-70 |
DS1230Y/AB
3 of 12
PACKAGES
The DS1230 devices are available in two packages: 28-pin DIP and 34-pin PowerCap Module (PCM).
The 28-pin DIP integrates a lithium battery, an SRAM memory and a nonvolatile control function into a
single package with a JEDEC-standard, 600-mil DIP pinout. The 34-pin PowerCap Module integrates
SRAM memory and nonvolatile control along with contacts for connection to the lithium battery in the
DS9034PC PowerCap. The PowerCap Module package design allows a DS1230 PCM device to be
surface mounted without subjecting its lithium backup battery to destructive high-temperature reflow
soldering. After a DS1230 PCM is reflow soldered, a DS9034PC PowerCap is snapped on top of the
PCM to form a complete Nonvolatile SRAM module. The DS9034PC is keyed to prevent improper
attachment. DS1230 PowerCap Modules and DS9034PC PowerCaps are ordered separately and shipped
in separate containers. See the DS9034PC data sheet for further information.
ABSOLUTE MAXIMUM RATINGS*
Voltage on Any Pin Relative to Ground
Operating Temperature
Storage Temperature
Soldering Temperature
-0.3V to +7.0V
0°C to 70°C, -40°C to +85°C for IND parts
-40°C to +70°C, -40°C to +85°C for IND parts
260°C for 10 seconds
*
This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operation sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods of time may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
(t
A
: See Note 10)
PARAMETER
SYMBOL
DS1230AB Power Supply Voltage
V
CC
DS1230Y Power Supply Voltage
V
CC
Logic 1
V
IH
Logic 0
V
IL
MIN
4.75
4.5
2.2
0.0
TYP
5.0
5.0
MAX
5.25
5.5
V
CC
0.8
UNITS
V
V
V
V
NOTES
DC ELECTRICAL
(V
CC
=5V
±
=
5% for DS1230AB)
CHARACTERISTICS
(t
A
: See Note 10) (V
CC
=5V
±
=
10% for DS1230Y)
PARAMETER
SYMBOL
Input Leakage Current
I
IL
I/O Leakage Current
CE
≥
V
IH
≤
V
CC
I
IO
Output Current @ 2.4V
I
OH
Output Current @ 0.4V
I
OL
Standby Current
CE
=2.2V
I
CCS1
Standby Current
CE
=V
CC
-0.5V
I
CCS2
Operating Current
I
CCO1
Write Protection Voltage (DS1230AB)
V
TP
Write Protection Voltage (DS1230Y)
V
TP
MIN
-1.0
-1.0
-1.0
2.0
TYP
MAX
+1.0
+1.0
UNITS
μ
A
μ
A
mA
mA
mA
mA
mA
V
V
NOTES
5.0
3.0
10.0
5.0
85
4.75
4.5
4.50
4.25
4.62
4.37
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| S1230ABP-70-IND | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:256k Nonvolatile SRAM |
| S-1231A | 功能描述:SWITCH ROTARY DIP 16-POS SIDE RoHS:是 類別:開關(guān) >> DIP 系列:S-1000A 特色產(chǎn)品:RDM Series Rotary DIP Switch 標(biāo)準(zhǔn)包裝:70 系列:RDM 電路:十六進(jìn)制 位置數(shù):16 觸點(diǎn)額定電壓:0.1A @ 42VDC 觸動(dòng)器類型:用于工具旋轉(zhuǎn) 觸動(dòng)器電平:凹槽式 安裝類型:通孔 方向:頂部觸動(dòng) 可清洗:是 其它名稱:EG4977-5RDMAR16PIT |
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| S1236 | 制造商:LAPP/CONTACT CONNECTORS 功能描述:SLR 36 SKINTOP W/R GY W/ NUT |
| S1237 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRIANGULAR TYPE |
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