參數(shù)資料
型號： S12CRGV4
廠商： Motorola, Inc.
英文描述： MC9S12DT128 Device User Guide V02.09
中文描述： MC9S12DT128設(shè)備的用戶手冊V02.09
文件頁數(shù)： 111/138頁
文件大小： 2083K
代理商： S12CRGV4
MC9S12DT128 Device User Guide — V02.09
111
A.3 NVM, Flash and EEPROM
NOTE:
Unless otherwise noted the abbreviation NVM (Non Volatile Memory) is used for
both Flash and EEPROM.
A.3.1 NVM timing
The time base for all NVM program or erase operations is derived from the oscillator. A minimum
oscillator frequency f
NVMOSC
is required for performing program or erase operations. The NVM modules
do not have any means to monitor the frequency and will not prevent program or erase operation at
frequencies above or below the specified minimum. Attempting to program or erase the NVM modules at
a lower frequency a full program or erase transition is not assured.
The Flash and EEPROM program and erase operations are timed using a clock derived from the oscillator
using the FCLKDIV and ECLKDIV registers respectively. The frequency of this clock must be set within
the limits specified as f
NVMOP
.
The minimum program and erase times shown in
Table A-11
are calculated for maximum f
NVMOP
and
maximum f
bus
. The maximum times are calculated for minimum f
NVMOP
and a f
bus
of 2MHz.
A.3.1.1 Single Word Programming
The programming time for single word programming is dependant on the bus frequency as a well as on
the frequency f
NVMOP
and can be calculated according to the following formula.
t
swpgm
f
NVMOP
A.3.1.2 Row Programming
ThisappliesonlytotheFlashwhereupto32wordsinarowcanbeprogrammedconsecutivelybykeeping
the command pipeline filled. The time to program a consecutive word can be calculated as:
The time to program a whole row is:
Row programming is more than 2 times faster than single word programming.
A.3.1.3 Sector Erase
Erasing a 512 byte Flash sector or a 4 byte EEPROM sector takes:
9
--------1
25
1
f
bus
----------
+
=
t
bwpgm
4
1
f
NVMOP
---------------------
9
1
f
bus
----------
+
=
t
brpgm
t
swpgm
31 t
bwpgm
+
=
相關(guān)PDF資料
PDF描述
S12CRGV4D MC9S12DT128 Device User Guide V02.09
S12DTB128PIMV2 MC9S12DT128 Device User Guide V02.09
S12DTB128PIMV2D MC9S12DT128 Device User Guide V02.09
S12ECT16B8CV1 MC9S12DT128 Device User Guide V02.09
S12ECT16B8CV1D MC9S12DT128 Device User Guide V02.09
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S12CRGV4D 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:MC9S12DT128 Device User Guide V02.09
S12D 功能描述:整流器 200V 12A Std. Recovery RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
S12-DC 制造商:Middle Atlantic Products 功能描述:
S12DG 制造商:Middle Atlantic Products 功能描述:
S12D-HM 制造商:Middle Atlantic Products 功能描述:
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價(jià)

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*