- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄376330 > S12SCIV2 (Motorola, Inc.) MC9S12DT128 Device User Guide V02.09 PDF資料下載
參數(shù)資料
| 型號： | S12SCIV2 |
| 廠商： | Motorola, Inc. |
| 英文描述： | MC9S12DT128 Device User Guide V02.09 |
| 中文描述： | MC9S12DT128設備的用戶手冊V02.09 |
| 文件頁數(shù)： | 111/138頁 |
| 文件大?。?/td> | 2083K |
| 代理商： | S12SCIV2 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁第78頁第79頁第80頁第81頁第82頁第83頁第84頁第85頁第86頁第87頁第88頁第89頁第90頁第91頁第92頁第93頁第94頁第95頁第96頁第97頁第98頁第99頁第100頁第101頁第102頁第103頁第104頁第105頁第106頁第107頁第108頁第109頁第110頁當前第111頁第112頁第113頁第114頁第115頁第116頁第117頁第118頁第119頁第120頁第121頁第122頁第123頁第124頁第125頁第126頁第127頁第128頁第129頁第130頁第131頁第132頁第133頁第134頁第135頁第136頁第137頁第138頁
MC9S12DT128 Device User Guide — V02.09
111
A.3 NVM, Flash and EEPROM
NOTE:
Unless otherwise noted the abbreviation NVM (Non Volatile Memory) is used for
both Flash and EEPROM.
A.3.1 NVM timing
The time base for all NVM program or erase operations is derived from the oscillator. A minimum
oscillator frequency f
NVMOSC
is required for performing program or erase operations. The NVM modules
do not have any means to monitor the frequency and will not prevent program or erase operation at
frequencies above or below the specified minimum. Attempting to program or erase the NVM modules at
a lower frequency a full program or erase transition is not assured.
The Flash and EEPROM program and erase operations are timed using a clock derived from the oscillator
using the FCLKDIV and ECLKDIV registers respectively. The frequency of this clock must be set within
the limits specified as f
NVMOP
.
The minimum program and erase times shown in
Table A-11
are calculated for maximum f
NVMOP
and
maximum f
bus
. The maximum times are calculated for minimum f
NVMOP
and a f
bus
of 2MHz.
A.3.1.1 Single Word Programming
The programming time for single word programming is dependant on the bus frequency as a well as on
the frequency f
NVMOP
and can be calculated according to the following formula.
t
swpgm
f
NVMOP
A.3.1.2 Row Programming
ThisappliesonlytotheFlashwhereupto32wordsinarowcanbeprogrammedconsecutivelybykeeping
the command pipeline filled. The time to program a consecutive word can be calculated as:
The time to program a whole row is:
Row programming is more than 2 times faster than single word programming.
A.3.1.3 Sector Erase
Erasing a 512 byte Flash sector or a 4 byte EEPROM sector takes:
9
--------1
25
1
f
bus
----------
+
=
t
bwpgm
4
1
f
NVMOP
---------------------
9
1
f
bus
----------
+
=
t
brpgm
t
swpgm
31 t
bwpgm
+
=
相關PDF資料 |
PDF描述 |
|---|---|
| S12SCIV2D | MC9S12DT128 Device User Guide V02.09 |
| S12VREGV1 | MC9S12DT128 Device User Guide V02.09 |
| S12VREGV1D | MC9S12DT128 Device User Guide V02.09 |
| S12MMCV4 | MC9S12DT128 Device User Guide V02.09 |
| S12MMCV4D | MC9S12DT128 Device User Guide V02.09 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| S12SCIV2/D | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:Device User Guide V01.18 |
| S12SCIV2D | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:MC9S12DT128 Device User Guide V02.09 |
| S12SP6R | 制造商:Banner Engineering 功能描述:12 mm Series: Receiver, Range: 15 m, Input: 10-30V dc, Output: Complementary PNP |
| S12SP6RQDP | 制造商:Banner Engineering 功能描述:S12 Series: Receiver, Range: 15 m, Input: 10-30V dc, Output: Complementary PNP, |
| S12SP6RQP | 制造商:Banner Engineering 功能描述:S12 Series: Receiver, Range: 15 m, Input: 10-30V dc, Output: Complementary PNP, |
發(fā)布緊急采購，3分鐘左右您將得到回復。